Lithographic apparatus and device manufacturing method

{
  "publication_number": "US9766556B2",
  "country": "US",
  "kind": "B2",
  "title": "Lithographic apparatus and device manufacturing method",
  "abstract": "A gas knife configured to dry a surface in an immersion lithographic apparatus is optimized to remove liquid by ensuring that a pressure gradient is built up in the liquid film on the surface being dried.",
  "claims": [
    "1. A lithographic projection apparatus arranged to project a pattern from a patterning device onto a substrate through a liquid, the apparatus comprising: a liquid confinement structure configured to at least partly confine the liquid in a space between a projection system and the substrate; a gas supply opening configured to provide gas onto a surface; an extractor opening configured to remove gas, liquid, or both; and a control system configured to arrange that a gas flow rate out of the gas opening is within 20% of a gas flow rate into the extractor opening.",
    "2. The apparatus of claim 1, wherein the gas supply opening and/or control system is configured to provide the flow of gas at an angle of between 5 and 20° off a perpendicular from the surface.",
    "3. The apparatus of claim 1, wherein the control system is configured to cause a gas to flow out of the gas supply opening at a speed of between 50 and 200 m/s.",
    "4. The apparatus of claim 1, wherein the control system is configured to cause a gas flow rate out of the gas supply opening between 75 and 750 liters/minute/meter length of gas supply opening outlet.",
    "5. The apparatus of claim 1, wherein the gas supply opening is between 0.2 and 8 mm away from the extractor opening.",
    "6. The apparatus of claim 1, wherein the control system is further configured to arrange a local pressure build-up of 0.05 bar gauge or more between the surface and the gas supply opening and/or extractor opening.",
    "7. The apparatus of claim 1, further comprising a positioner configured to control a position of the surface, when being dried, such that a point on the surface passes the extractor opening before the gas supply opening.",
    "8. A device manufacturing method comprising: projecting, using a projection system of a lithographic apparatus, a patterned beam of radiation through a liquid onto a substrate; at least partly confining the liquid in a space between the projection system and the substrate; supplying a flow of gas through a gas supply opening of the lithographic apparatus onto a surface; extracting gas, liquid, or both, through an outlet of the lithographic apparatus; and arranging that a gas flow rate out of the gas opening is within 20% of a gas flow rate into the extractor.",
    "9. The method of claim 8, comprising supplying the flow of gas at an angle of between 5 and 20° off a perpendicular from the surface.",
    "10. The method of claim 8, comprising supplying the flow of gas at a speed of between 50 and 200 m/s.",
    "11. The method of claim 8, further comprising arranging a local pressure build-up of 0.05 bar gauge or more between the surface and the gas supply opening and/or outlet.",
    "12. The method of claim 8, wherein the gas flow rate out of the gas opening is between 75 and 750 liters/minute/meter length of gas opening outlet.",
    "13. The method of claim 8, wherein the gas supply opening is between 0.2 and 8 mm away from the outlet.",
    "14. The method of claim 8, further comprising controlling a position of the surface, when being dried, such that a point on the surface passes the outlet before the gas supply opening.",
    "15. A lithographic projection apparatus arranged to project a pattern from a patterning device onto a substrate through a liquid, the apparatus comprising: a liquid confinement structure configured to at least partly confine the liquid in a space between a projection system and the substrate; a gas supply opening configured to provide gas onto a surface; an extractor opening configured to remove gas, liquid, or both; and a control system configured to arrange a local pressure build-up of 0.05 bar gauge or more and a gas speed of 50 m/s or more, in the gas between the surface and the gas supply opening and/or extractor opening.",
    "16. The apparatus of claim 15, wherein gas supply opening and/or the control system is configured to provide the flow of gas at an angle of between 5 and 20° off a perpendicular from the surface.",
    "17. The apparatus of claim 15, wherein the control system is configured to cause a gas flow rate out of the gas supply opening between 75 and 750 liters/minute/meter length of gas supply opening outlet.",
    "18. The apparatus of claim 15, wherein the gas supply opening is between 0.2 and 8 mm away from the extraction opening.",
    "19. The apparatus of claim 15, wherein the distance between the extractor opening and the gas supply opening is 0.5 to 0.8 times the distance a flat surface extends from the gas supply opening on the other side to the extractor opening.",
    "20. The apparatus of claim 15, further comprising a further extractor opening configured to remove gas, liquid, or both, from the surface, the extractor opening and the further extraction opening being respectively on opposite sides of the gas supply opening."
  ],
  "description_excerpt": "This application is a continuation of U.S. patent application Ser. No. 14/792,143, filed Jul. 6, 2015, now allowed, which is a continuation of U.S. patent application Ser. No. 12/901,939, filed Oct. 11, 2010, now U.S. Pat. No. 9,099,501, which is a continuation of U.S. patent application Ser. No. 11/167,552, filed Jun. 28, 2005, now U.S. Pat. No. 7,834,974, each of the foregoing applications is incorporated herein in its entirety by reference.\n\nThe present invention relates to a lithographic apparatus and a method for manufacturing a device.\n\nA lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned.",
  "cpc": [
    "G03F 7/70866",
    "G03F 7/2041",
    "G03F 7/70341",
    "H01L 21/67034",
    "H10P 72/0408"
  ],
  "ipc": [
    "G03F 7/20",
    "H10P 72/00",
    "H10P 95/00",
    "G03B 27/52"
  ],
  "assignees": [
    "ASML Netherlands BV"
  ],
  "inventors": [
    "Nicolaas Rudolf Kemper",
    "Sjoerd Nicolaas Lambertus Donders",
    "Christiaan Alexander Hoogendam",
    "Nicolaas Ten Kate",
    "Sergei Shulepov"
  ],
  "filing_date": "2016-09-15",
  "publication_date": "2017-09-19",
  "grant_date": "2017-09-19",
  "priority_date": "2005-06-28",
  "application_number": "US-201615266453-A",
  "family_id": "37031324",
  "cited_by_count": 1,
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