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Patent · US8748780B2 · B2 · US

Substrate processing apparatus, substrate processing method, and computer-readable storage medium

(11) Publication number
US8748780B2
(21) Application number
US-789208-A
(22) Filing date
2008-01-16
(30) Priority date
2007-01-17
(43) Publication date
2014-06-10
(45) Date of grant
2014-06-10
(52) CPC
  • G03F Photomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices; materials therefor; originals therefor; apparatus specially adapted therefor: 7/70708
  • B05C Apparatus for applying fluent materials to surfaces, in general: 11/00
  • B63C Launching, hauling-out, or dry-docking of vessels; life-saving in water; equipment for dwelling or working under water; means for salvaging or searching for underwater objects: 2005/022, 5/02
  • C23C Coating metallic material; coating material with metallic material; surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general: 14/541, 16/00, 16/46
  • F16B Devices for fastening or securing constructional elements or machine parts together, e.g. nails, bolts, circlips, clamps, clips or wedges; joints or jointing: 2/065
  • H01L Electric elements: 21/683, 21/6875
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/0434, 72/0616, 72/70, 72/7614, 72/78
(73) Assignee
MORO SHOUKEN; TAKAKI YASUHIRO; KANEDA MASATOSHI; TOKYO ELECTRON LTD
(54) Title
Substrate processing apparatus, substrate processing method, and computer-readable storage medium
(57) Abstract

A disclosed substrate processing apparatus comprises a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusion by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions including at least one of the holes so that at least one of the two or more regions is two-dimensionally closed by the partition member.

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Claims (21)

  1. A substrate processing apparatus adapted to heat and/or cool a substrate, the apparatus comprising: a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusions by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions each including at least one of the plural holes so that at least one of the two or more regions is two-dimensionally closed by the partition member, wherein the partition member comprises: a first ring-like partition member arranged on the heat exchange plate concentrically at a first diameter from a center of the substrate placed on the plural protrusions; and a second ring-like partition member arranged on the heat exchange plate concentrically at a second diameter, larger than the first diameter, from the center of the substrate placed on the plural protrusions, one or more of the plural protrusions are provided both inside the first ring-like partition member and outside the first ring-like partition member on the heat exchange plate, and the plural protrusions are formed into pins.
  2. The substrate processing apparatus of claim 1, wherein the partition member divides the gap into the two or more regions so that the two or more regions are arranged in a radial direction.
  3. The substrate processing apparatus of claim 2, wherein a part of the partition member is located along and substantially beneath a circumferential portion of the substrate to be placed on the plural protrusions.
  4. The substrate processing apparatus of claim 1, wherein the heat exchange plate is configured to contain heat exchange elements corresponding to the two or more regions so as to independently control temperatures of the two or more regions.
  5. The substrate processing apparatus of claim 1, further comprising a substrate warpage measurement unit that measures warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the heat exchange plate is configured to contain heat exchange elements corresponding to the two or more regions so as to independently control temperatures of the two or more regions in accordance with the information.
  6. The substrate processing apparatus of claim 1, further comprising a substrate warpage measurement unit that measures warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the heat exchange plate is configured to contain heat exchange elements corresponding to the two or more regions so as to independently control temperatures of the two or more regions in accordance with the information, and wherein the suction portion is configured to include suction amount adjustment portions corresponding to the two or more regions so as to independently control suction amounts from the two or more regions in accordance with the information.
  7. The substrate processing apparatus of claim 1, wherein the suction portion is configured to include suction amount adjustment portions corresponding to the two or more regions so as to independently control suction amounts from the two or more regions.
  8. The substrate processing apparatus of claim 1, further comprising a substrate warpage measurement unit that measures warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the suction portion is configured to include suction amount adjustment portions corresponding to the two or more regions so as to independently control suction amounts from the two or more regions in accordance with the information.
  9. The substrate processing apparatus of claim 5, wherein the information further includes a degree of warpage of the substrate.
  10. The substrate processing apparatus of claim 8, wherein the information further includes a degree of warpage of the substrate.
  11. A substrate processing method for heating and/or cooling a substrate, comprising steps of: placing the substrate on plural protrusions that are provided on a heat exchange plate so as to create a gap between the substrate and the heat exchange plate; attracting the substrate onto the plural protrusions by suction through two or more gap regions defined by dividing the gap using a partition member that is provided on the heat exchange plate and lower than the plural protrusions, at least one of the gap regions being two-dimensionally closed by the partition member, and heating and/or cooling the substrate attracted onto the plural protrusions through the two or more gap regions, wherein the partition member comprises: a first ring-like partition member arranged on the heat exchange plate concentrically at a first diameter from a center of the substrate placed on the plural protrusions; and a second ring-like partition member arranged on the heat exchange plate concentrically at a second diameter, larger than the first diameter, from the center of the substrate placed on the plural protrusions, one or more of the plural protrusions are provided both inside the first ring-like partition member and outside the first ring-like partition member on the heat exchange plate, and the plural protrusions are formed into pins.
  12. The substrate processing method of claim 11, wherein the partition member divides the gap into the two or more regions so that the two or more regions are arranged in a radial direction.
  13. The substrate processing method of claim 12, wherein a part of the partition member is located substantially below and along a circumferential portion of the substrate to be placed on the plural protrusions.
  14. The substrate processing method of claim 11, wherein the step of heating and/or cooling independently heats and/or cools the two or more gap regions.
  15. The substrate processing method of claim 11, further comprising a step of measuring warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the step of heating and/or cooling independently controls temperatures of the two or more gap regions in accordance with the information.
  16. The substrate processing method of claim 11, wherein the step of attracting attracts the substrate onto the plural protrusions with suction amounts corresponding to the two or more gap regions.
  17. The substrate processing method of claim 11, further comprising a step of measuring warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the step of attracting attracts the substrate onto the plural protrusions with suction amounts corresponding to the two or more gap regions in accordance with the information.
  18. The substrate processing method of claim 15, wherein the information further includes a degree of warpage of the substrate.
  19. The substrate processing method of claim 17, wherein the information further includes a degree of warpage of the substrate.
  20. The substrate processing apparatus of claim 1, wherein the partition member defines a two-dimensionally closed periphery for at least one of the two or more regions in a first horizontal plane, while continuing to permit an air-flow communication between at least two of the two or more regions in a second horizontal plane.
  21. The substrate processing method of claim 11, wherein the partition member defines a two-dimensionally closed periphery for at least one of the two or more regions in a first horizontal plane, while continuing to permit an air-flow communication between at least two of the two or more regions in a second horizontal plane.

Citations (16)

  • JP2001060617A
  • JP2006210400A
  • JPH06338450A
  • JPH10284360A
  • US2005149886A1
  • US2005211694A1
  • US2006090855A1
  • US2006241891A1
  • US2006289432A1
  • US2007128570A1
  • US5564682A
  • US6290274B1
  • US6307184B1
  • US6320736B1
  • US6628503B2
  • US8003919B2
Record as JSON 
{
  "publication_number": "US8748780B2",
  "country": "US",
  "kind": "B2",
  "title": "Substrate processing apparatus, substrate processing method, and computer-readable storage medium",
  "abstract": "A disclosed substrate processing apparatus comprises a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusion by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions including at least one of the holes so that at least one of the two or more regions is two-dimensionally closed by the partition member.",
  "claims": [
    "1. A substrate processing apparatus adapted to heat and/or cool a substrate, the apparatus comprising: a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusions by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions each including at least one of the plural holes so that at least one of the two or more regions is two-dimensionally closed by the partition member, wherein the partition member comprises: a first ring-like partition member arranged on the heat exchange plate concentrically at a first diameter from a center of the substrate placed on the plural protrusions; and a second ring-like partition member arranged on the heat exchange plate concentrically at a second diameter, larger than the first diameter, from the center of the substrate placed on the plural protrusions, one or more of the plural protrusions are provided both inside the first ring-like partition member and outside the first ring-like partition member on the heat exchange plate, and the plural protrusions are formed into pins.",
    "2. The substrate processing apparatus of claim 1, wherein the partition member divides the gap into the two or more regions so that the two or more regions are arranged in a radial direction.",
    "3. The substrate processing apparatus of claim 2, wherein a part of the partition member is located along and substantially beneath a circumferential portion of the substrate to be placed on the plural protrusions.",
    "4. The substrate processing apparatus of claim 1, wherein the heat exchange plate is configured to contain heat exchange elements corresponding to the two or more regions so as to independently control temperatures of the two or more regions.",
    "5. The substrate processing apparatus of claim 1, further comprising a substrate warpage measurement unit that measures warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the heat exchange plate is configured to contain heat exchange elements corresponding to the two or more regions so as to independently control temperatures of the two or more regions in accordance with the information.",
    "6. The substrate processing apparatus of claim 1, further comprising a substrate warpage measurement unit that measures warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the heat exchange plate is configured to contain heat exchange elements corresponding to the two or more regions so as to independently control temperatures of the two or more regions in accordance with the information, and wherein the suction portion is configured to include suction amount adjustment portions corresponding to the two or more regions so as to independently control suction amounts from the two or more regions in accordance with the information.",
    "7. The substrate processing apparatus of claim 1, wherein the suction portion is configured to include suction amount adjustment portions corresponding to the two or more regions so as to independently control suction amounts from the two or more regions.",
    "8. The substrate processing apparatus of claim 1, further comprising a substrate warpage measurement unit that measures warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the suction portion is configured to include suction amount adjustment portions corresponding to the two or more regions so as to independently control suction amounts from the two or more regions in accordance with the information.",
    "9. The substrate processing apparatus of claim 5, wherein the information further includes a degree of warpage of the substrate.",
    "10. The substrate processing apparatus of claim 8, wherein the information further includes a degree of warpage of the substrate.",
    "11. A substrate processing method for heating and/or cooling a substrate, comprising steps of: placing the substrate on plural protrusions that are provided on a heat exchange plate so as to create a gap between the substrate and the heat exchange plate; attracting the substrate onto the plural protrusions by suction through two or more gap regions defined by dividing the gap using a partition member that is provided on the heat exchange plate and lower than the plural protrusions, at least one of the gap regions being two-dimensionally closed by the partition member, and heating and/or cooling the substrate attracted onto the plural protrusions through the two or more gap regions, wherein the partition member comprises: a first ring-like partition member arranged on the heat exchange plate concentrically at a first diameter from a center of the substrate placed on the plural protrusions; and a second ring-like partition member arranged on the heat exchange plate concentrically at a second diameter, larger than the first diameter, from the center of the substrate placed on the plural protrusions, one or more of the plural protrusions are provided both inside the first ring-like partition member and outside the first ring-like partition member on the heat exchange plate, and the plural protrusions are formed into pins.",
    "12. The substrate processing method of claim 11, wherein the partition member divides the gap into the two or more regions so that the two or more regions are arranged in a radial direction.",
    "13. The substrate processing method of claim 12, wherein a part of the partition member is located substantially below and along a circumferential portion of the substrate to be placed on the plural protrusions.",
    "14. The substrate processing method of claim 11, wherein the step of heating and/or cooling independently heats and/or cools the two or more gap regions.",
    "15. The substrate processing method of claim 11, further comprising a step of measuring warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the step of heating and/or cooling independently controls temperatures of the two or more gap regions in accordance with the information.",
    "16. The substrate processing method of claim 11, wherein the step of attracting attracts the substrate onto the plural protrusions with suction amounts corresponding to the two or more gap regions.",
    "17. The substrate processing method of claim 11, further comprising a step of measuring warpage of the substrate so as to generate information indicating at least warpage direction of the substrate, wherein the step of attracting attracts the substrate onto the plural protrusions with suction amounts corresponding to the two or more gap regions in accordance with the information.",
    "18. The substrate processing method of claim 15, wherein the information further includes a degree of warpage of the substrate.",
    "19. The substrate processing method of claim 17, wherein the information further includes a degree of warpage of the substrate.",
    "20. The substrate processing apparatus of claim 1, wherein the partition member defines a two-dimensionally closed periphery for at least one of the two or more regions in a first horizontal plane, while continuing to permit an air-flow communication between at least two of the two or more regions in a second horizontal plane.",
    "21. The substrate processing method of claim 11, wherein the partition member defines a two-dimensionally closed periphery for at least one of the two or more regions in a first horizontal plane, while continuing to permit an air-flow communication between at least two of the two or more regions in a second horizontal plane."
  ],
  "cpc": [
    "G03F 7/70708",
    "B05C 11/00",
    "B63C 2005/022",
    "B63C 5/02",
    "C23C 14/541",
    "C23C 16/00",
    "C23C 16/46",
    "F16B 2/065",
    "H01L 21/683",
    "H01L 21/6875",
    "H10P 72/0434",
    "H10P 72/0616",
    "H10P 72/70",
    "H10P 72/7614",
    "H10P 72/78"
  ],
  "assignees": [
    "MORO SHOUKEN",
    "TAKAKI YASUHIRO",
    "KANEDA MASATOSHI",
    "TOKYO ELECTRON LTD"
  ],
  "filing_date": "2008-01-16",
  "publication_date": "2014-06-10",
  "grant_date": "2014-06-10",
  "priority_date": "2007-01-17",
  "application_number": "US-789208-A",
  "family_id": "39617990",
  "citations": [
    "JP2001060617A",
    "JP2006210400A",
    "JPH06338450A",
    "JPH10284360A",
    "US2005149886A1",
    "US2005211694A1",
    "US2006090855A1",
    "US2006241891A1",
    "US2006289432A1",
    "US2007128570A1",
    "US5564682A",
    "US6290274B1",
    "US6307184B1",
    "US6320736B1",
    "US6628503B2",
    "US8003919B2"
  ]
}

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