MLchartDataset catalogue

Patent · US9761754B2 · B2 · US

Systems and methods for preparing GaN and related materials for micro assembly

(11) Publication number
US9761754B2
(21) Application number
14/743,984
(22) Filing date
2015-06-18
(30) Priority date
2014-06-18
(43) Publication date
2017-09-12
(45) Date of grant
2017-09-12
(52) CPC
  • H10H Inorganic light-emitting semiconductor devices having potential barriers: 20/01335, 20/018, 20/034, 20/82, 20/84, 20/852
  • H01L Electric elements: 21/187, 21/2007, 21/7806, 2224/81805, 24/81, 25/50, 2924/00, 2924/00011, 2924/13055, 2933/0025, 33/007, 33/0079, 33/22, 33/44
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 10/128, 72/74, 72/7428, 72/7434, 90/1914, 95/11
  • H10W Generic packages, interconnections, connectors or other constructional details of devices covered by class H10: 72/072, 72/07236, 90/00
(73) Assignee
X CELEPRINT LTD
(54) Title
Systems and methods for preparing GaN and related materials for micro assembly
(57) Abstract

The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high-voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.

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Claims (26)

  1. A method of preparing released or releasable structures from a silicon native device substrate, the method comprising: depositing at least one of GaN, AlGaN, InGaN, InGaAlN, and SiN on a native device substrate comprising Si (1 1 1), thereby forming an epitaxial material; forming devices using the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; forming anchoring structures and tethering structures that are at least partially in contact with a side of the releasable structure opposite the native device substrate and at least partially in contact with the native device substrate; removing silicon material underneath the releasable structures with an etchant to form tethers connecting the releasable structures to anchors, thereby forming printable structures comprising the devices, wherein the position and orientation of the printable structures is maintained by the tethers and anchors; and exposing the native device substrate and the printable structures connected to the native device substrate by anchoring structures and tethering structures to one or more chemical agents.
  2. The method of claim 1, wherein exposing the native device substrate and the printable structures to one or more chemical agents comprises exposure to heated phosphoric acid.
  3. The method of claim 1, wherein exposing the native device substrate and the printable structures to one or more chemical agents imparts surface roughness to the newly exposed surface.
  4. The method of claim 1, wherein the etchant is heated tetramethyl ammonium hydroxide, potassium hydroxide, sodium hydroxide or a basic solution for performing anisotropic silicon etch.
  5. The method of claim 1, wherein forming devices comprises depositing and/or patterning a dielectric and/or conductive thin film.
  6. The method of claim 1, wherein the anchoring structures and tethering structures are formed in the epitaxial material.
  7. The method of claim 1, wherein the anchoring and tethering structures are formed from non-epitaxial material.
  8. The method of claim 1, comprising depositing one or more of silicon nitride, and silicon oxide on the native device substrate.
  9. The method of claim 1, comprising forming one or more encapsulating structures to encapsulate at least a portion of the printable structure.
  10. The method of claim 1, comprising: prior to removing silicon material underneath the structures, forming recesses in the exposed silicon.
  11. The method of claim 1, wherein forming recesses in the exposed silicon comprises etching the exposed silicon.
  12. The method of claim 1, comprising: micro transfer printing one or more printable substructures of the printable structures.
  13. The method of claim 1, wherein said micro transfer printing comprises: contacting one or more printable structures of the printable structures with a conformable transfer device having a contact surface, wherein contact between the contact surface and the one or more printable structures adheres the one or more printable structures to the contact surface; contacting the one or more printable structures disposed on the contact surface with the receiving surface of a destination substrate; and separating the contact surface of the conformable transfer device and the one or more printable structures, wherein the one or more printable structures are transferred onto the receiving surface, thereby assembling the one or more printable structures on the receiving surface of the destination substrate.
  14. The method of claim 13, wherein the conformable transfer device is an elastomer stamp.
  15. A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; forming patterned tethering and anchoring structures that are in contact with a side of the device opposite the native device substrate and in contact with only a portion of the exposed native device substrate; forming patterned sacrificial structures completely over the devices and the patterned tethering and anchoring structures on a side of the devices opposite the native device substrate, over only a portion or none of the patterned tethering and anchoring structures in contact with the exposed native device substrate, and only partially in contact with the exposed native device substrate, the patterned sacrificial structures differentially etchable from the native device substrate and the patterned tethering and anchoring structure; temporarily bonding the epitaxial material to an intermediate substrate and separating the epitaxial material from the native device substrate, thereby inverting the epitaxial material for micro assembly; releasing the devices from the intermediate substrate by removal of at least a portion of the sacrificial structures with an etchant to form tethers connecting the devices to anchors; and transferring the released materials for micro assembly on the intermediate substrate to an intermediate stamp.
  16. The method of claim 15, wherein the device substrate comprises a member selected from the group consisting of sapphire, gallium arsenide, indium phosphide, and silicon on insulator.
  17. The method of claim 15, wherein the one or more materials deposited on the device substrate comprise at least one member selected from the group consisting of GaN, AlGaN, and SiN.
  18. The method of claim 15, comprising at least partially completing the formation or delineation of devices on the intermediate substrate.
  19. The method of claim 15, comprising grinding the native device substrate to separate the epitaxial material from the native device substrate or using lift-off to separate the epitaxial material from the native device substrate or using laser lift-off to separate the epitaxial material from the native device substrate.
  20. The method of claim 19, wherein the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate and comprising exposing the absorbing layer to the laser illumination to at least partially decompose or otherwise form an interface that can initiate separation between the native substrate and the devices for micro assembly for the laser-lift off process.
  21. A method of preparing released materials for micro assembly from a native sapphire substrate via an intermediate substrate, the method comprising: depositing one or more materials on the native sapphire substrate to form an epitaxial material; forming devices with the epitaxial material on the native sapphire substrate; forming a tether structure that is insoluble to an etchant for releasing the materials for micro assembly from the intermediate substrate, wherein the tether structure is in contact with a side of the device opposite the native sapphire substrate and in contact with only a portion of the exposed native sapphire substrate; forming patterned sacrificial structures completely over the devices and the tether structure on a side of the devices opposite the native sapphire substrate, over only a portion or none of the tether structure in contact with the exposed native sapphire substrate, and only partially in contact with the exposed native sapphire substrate, the patterned sacrificial structures differentially etchable from the native sapphire substrate and the tether structure; adhering the materials for micro assembly to an intermediate substrate to form a bonded pair of substrates; performing a laser-lift off process, thereby separating the materials for micro assembly from the native sapphire substrate and separating the bonded pair of substrates, wherein: the materials for micro assembly are thereby inverted, and the sapphire substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the sapphire substrate such that upon exposure to the laser illumination the absorbing layer at least partially decomposes or otherwise forms an interface that can initiate separation between the sapphire substrate and the materials for micro assembly; and releasing the materials for micro assembly from the intermediate substrate by removing at least a portion of a sacrificial layer, thereby removing the selectively removable layer underneath the releasable structures and forming released, micro assemble-able GaN materials or devices from sapphire native substrates via the intermediate substrate.
  22. The method of claim 21, comprising: transferring the released materials for micro assembly on the intermediate substrate to an intermediate stamp, thereby presenting the materials for micro assembly in a different, un-inverted configuration for micro assembly.
  23. The method of claim 21, wherein forming the at least one of anchoring, tethering, and encapsulation structures selectively removable layer is done prior to adhering the materials for micro assembly to the intermediate substrate.
  24. A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate having a controlled tackiness, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; temporarily bonding the epitaxial material to an intermediate substrate with a controlled tackiness; separating the epitaxial material from the native device substrate and thereby inverting the epitaxial material for micro assembly; and transferring the released materials for micro assembly on the intermediate substrate to an intermediate stamp, the intermediate stamp also having controlled tackiness such that the intermediate stamp can remove the materials for micro assembly from the intermediate substrate.
  25. The method of claim 24, comprising at least partially completing the formation or delineation of devices on the intermediate substrate.
  26. The method of claim 25, wherein the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate and comprising exposing the absorbing layer to the laser illumination to at least partially decompose or otherwise form an interface that can initiate separation between the native substrate and the devices for micro assembly for the laser-lift off process.

Citations (81)

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Record as JSON 
{
  "publication_number": "US9761754B2",
  "country": "US",
  "kind": "B2",
  "title": "Systems and methods for preparing GaN and related materials for micro assembly",
  "abstract": "The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high-voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.",
  "claims": [
    "1. A method of preparing released or releasable structures from a silicon native device substrate, the method comprising: depositing at least one of GaN, AlGaN, InGaN, InGaAlN, and SiN on a native device substrate comprising Si (1 1 1), thereby forming an epitaxial material; forming devices using the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; forming anchoring structures and tethering structures that are at least partially in contact with a side of the releasable structure opposite the native device substrate and at least partially in contact with the native device substrate; removing silicon material underneath the releasable structures with an etchant to form tethers connecting the releasable structures to anchors, thereby forming printable structures comprising the devices, wherein the position and orientation of the printable structures is maintained by the tethers and anchors; and exposing the native device substrate and the printable structures connected to the native device substrate by anchoring structures and tethering structures to one or more chemical agents.",
    "2. The method of claim 1, wherein exposing the native device substrate and the printable structures to one or more chemical agents comprises exposure to heated phosphoric acid.",
    "3. The method of claim 1, wherein exposing the native device substrate and the printable structures to one or more chemical agents imparts surface roughness to the newly exposed surface.",
    "4. The method of claim 1, wherein the etchant is heated tetramethyl ammonium hydroxide, potassium hydroxide, sodium hydroxide or a basic solution for performing anisotropic silicon etch.",
    "5. The method of claim 1, wherein forming devices comprises depositing and/or patterning a dielectric and/or conductive thin film.",
    "6. The method of claim 1, wherein the anchoring structures and tethering structures are formed in the epitaxial material.",
    "7. The method of claim 1, wherein the anchoring and tethering structures are formed from non-epitaxial material.",
    "8. The method of claim 1, comprising depositing one or more of silicon nitride, and silicon oxide on the native device substrate.",
    "9. The method of claim 1, comprising forming one or more encapsulating structures to encapsulate at least a portion of the printable structure.",
    "10. The method of claim 1, comprising: prior to removing silicon material underneath the structures, forming recesses in the exposed silicon.",
    "11. The method of claim 1, wherein forming recesses in the exposed silicon comprises etching the exposed silicon.",
    "12. The method of claim 1, comprising: micro transfer printing one or more printable substructures of the printable structures.",
    "13. The method of claim 1, wherein said micro transfer printing comprises: contacting one or more printable structures of the printable structures with a conformable transfer device having a contact surface, wherein contact between the contact surface and the one or more printable structures adheres the one or more printable structures to the contact surface; contacting the one or more printable structures disposed on the contact surface with the receiving surface of a destination substrate; and separating the contact surface of the conformable transfer device and the one or more printable structures, wherein the one or more printable structures are transferred onto the receiving surface, thereby assembling the one or more printable structures on the receiving surface of the destination substrate.",
    "14. The method of claim 13, wherein the conformable transfer device is an elastomer stamp.",
    "15. A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; forming patterned tethering and anchoring structures that are in contact with a side of the device opposite the native device substrate and in contact with only a portion of the exposed native device substrate; forming patterned sacrificial structures completely over the devices and the patterned tethering and anchoring structures on a side of the devices opposite the native device substrate, over only a portion or none of the patterned tethering and anchoring structures in contact with the exposed native device substrate, and only partially in contact with the exposed native device substrate, the patterned sacrificial structures differentially etchable from the native device substrate and the patterned tethering and anchoring structure; temporarily bonding the epitaxial material to an intermediate substrate and separating the epitaxial material from the native device substrate, thereby inverting the epitaxial material for micro assembly; releasing the devices from the intermediate substrate by removal of at least a portion of the sacrificial structures with an etchant to form tethers connecting the devices to anchors; and transferring the released materials for micro assembly on the intermediate substrate to an intermediate stamp.",
    "16. The method of claim 15, wherein the device substrate comprises a member selected from the group consisting of sapphire, gallium arsenide, indium phosphide, and silicon on insulator.",
    "17. The method of claim 15, wherein the one or more materials deposited on the device substrate comprise at least one member selected from the group consisting of GaN, AlGaN, and SiN.",
    "18. The method of claim 15, comprising at least partially completing the formation or delineation of devices on the intermediate substrate.",
    "19. The method of claim 15, comprising grinding the native device substrate to separate the epitaxial material from the native device substrate or using lift-off to separate the epitaxial material from the native device substrate or using laser lift-off to separate the epitaxial material from the native device substrate.",
    "20. The method of claim 19, wherein the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate and comprising exposing the absorbing layer to the laser illumination to at least partially decompose or otherwise form an interface that can initiate separation between the native substrate and the devices for micro assembly for the laser-lift off process.",
    "21. A method of preparing released materials for micro assembly from a native sapphire substrate via an intermediate substrate, the method comprising: depositing one or more materials on the native sapphire substrate to form an epitaxial material; forming devices with the epitaxial material on the native sapphire substrate; forming a tether structure that is insoluble to an etchant for releasing the materials for micro assembly from the intermediate substrate, wherein the tether structure is in contact with a side of the device opposite the native sapphire substrate and in contact with only a portion of the exposed native sapphire substrate; forming patterned sacrificial structures completely over the devices and the tether structure on a side of the devices opposite the native sapphire substrate, over only a portion or none of the tether structure in contact with the exposed native sapphire substrate, and only partially in contact with the exposed native sapphire substrate, the patterned sacrificial structures differentially etchable from the native sapphire substrate and the tether structure; adhering the materials for micro assembly to an intermediate substrate to form a bonded pair of substrates; performing a laser-lift off process, thereby separating the materials for micro assembly from the native sapphire substrate and separating the bonded pair of substrates, wherein: the materials for micro assembly are thereby inverted, and the sapphire substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the sapphire substrate such that upon exposure to the laser illumination the absorbing layer at least partially decomposes or otherwise forms an interface that can initiate separation between the sapphire substrate and the materials for micro assembly; and releasing the materials for micro assembly from the intermediate substrate by removing at least a portion of a sacrificial layer, thereby removing the selectively removable layer underneath the releasable structures and forming released, micro assemble-able GaN materials or devices from sapphire native substrates via the intermediate substrate.",
    "22. The method of claim 21, comprising: transferring the released materials for micro assembly on the intermediate substrate to an intermediate stamp, thereby presenting the materials for micro assembly in a different, un-inverted configuration for micro assembly.",
    "23. The method of claim 21, wherein forming the at least one of anchoring, tethering, and encapsulation structures selectively removable layer is done prior to adhering the materials for micro assembly to the intermediate substrate.",
    "24. A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate having a controlled tackiness, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; temporarily bonding the epitaxial material to an intermediate substrate with a controlled tackiness; separating the epitaxial material from the native device substrate and thereby inverting the epitaxial material for micro assembly; and transferring the released materials for micro assembly on the intermediate substrate to an intermediate stamp, the intermediate stamp also having controlled tackiness such that the intermediate stamp can remove the materials for micro assembly from the intermediate substrate.",
    "25. The method of claim 24, comprising at least partially completing the formation or delineation of devices on the intermediate substrate.",
    "26. The method of claim 25, wherein the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate and comprising exposing the absorbing layer to the laser illumination to at least partially decompose or otherwise form an interface that can initiate separation between the native substrate and the devices for micro assembly for the laser-lift off process."
  ],
  "cpc": [
    "H10H 20/01335",
    "H01L 21/187",
    "H01L 21/2007",
    "H01L 21/7806",
    "H01L 2224/81805",
    "H01L 24/81",
    "H01L 25/50",
    "H01L 2924/00",
    "H01L 2924/00011",
    "H01L 2924/13055",
    "H01L 2933/0025",
    "H01L 33/007",
    "H01L 33/0079",
    "H01L 33/22",
    "H01L 33/44",
    "H10H 20/018",
    "H10H 20/034",
    "H10H 20/82",
    "H10H 20/84",
    "H10H 20/852",
    "H10P 10/128",
    "H10P 72/74",
    "H10P 72/7428",
    "H10P 72/7434",
    "H10P 90/1914",
    "H10P 95/11",
    "H10W 72/072",
    "H10W 72/07236",
    "H10W 90/00"
  ],
  "assignees": [
    "X CELEPRINT LTD"
  ],
  "filing_date": "2015-06-18",
  "publication_date": "2017-09-12",
  "grant_date": "2017-09-12",
  "priority_date": "2014-06-18",
  "application_number": "US-201514743984-A",
  "family_id": "53539648",
  "citations": [
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    "US9209348B2",
    "US9368683B1",
    "US9370864B2",
    "US9620695B2",
    "WO2008103931A2"
  ]
}

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