MLchartDataset catalogue

Gate all around

Term · Semiconductors · MLC-T-SEM-000148

A transistor architecture where the gate material completely surrounds the channel region, providing superior electrostatic control over the channel. This design reduces leakage current and improves switching performance compared to planar or FinFET transistors. GAA transistors are being adopted in advanced technology nodes, such as 2 nanometer and beyond, to continue scaling down device dimensions.

Table 1. Record
IdentifierMLC-T-SEM-000148
FieldSemiconductors
SubjectDesign, EDA & Devices
AbbreviationGAA
Record as JSON 
{
  "id": "MLC-T-SEM-000148",
  "term": "Gate all around",
  "field": "Semiconductors",
  "definition": "A transistor architecture where the gate material completely surrounds the channel region, providing superior electrostatic control over the channel. This design reduces leakage current and improves switching performance compared to planar or FinFET transistors. GAA transistors are being adopted in advanced technology nodes, such as 2 nanometer and beyond, to continue scaling down device dimensions.",
  "abbreviation": "GAA",
  "subject": "Design, EDA & Devices",
  "url": "https://mlchart.com/terminology/semiconductors/gate-all-around/"
}

Record 147 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.