MLchartDataset catalogue

High-k dielectric

Term · Semiconductors · MLC-T-SEM-000163

An insulating material with a higher dielectric constant (k) than silicon dioxide, used as the gate dielectric in advanced MOSFETs. Replacing SiO2 with a high-k material allows for a physically thicker gate dielectric while maintaining an equivalent electrical thickness, which reduces gate leakage current. Hafnium dioxide (HfO2) is a commonly used high-k dielectric.

Table 1. Record
IdentifierMLC-T-SEM-000163
FieldSemiconductors
SubjectFront-End Process
Record as JSON 
{
  "id": "MLC-T-SEM-000163",
  "term": "High-k dielectric",
  "field": "Semiconductors",
  "definition": "An insulating material with a higher dielectric constant (k) than silicon dioxide, used as the gate dielectric in advanced MOSFETs. Replacing SiO2 with a high-k material allows for a physically thicker gate dielectric while maintaining an equivalent electrical thickness, which reduces gate leakage current. Hafnium dioxide (HfO2) is a commonly used high-k dielectric.",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/high-k-dielectric/"
}

Record 163 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.