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High-k Metal Gate

Term · Semiconductors · MLC-T-SEM-000164

A transistor gate stack incorporating a dielectric material with a high dielectric constant (high-k) and a metal gate electrode. This structure replaces the traditional polysilicon gate and silicon dioxide dielectric to reduce gate leakage current and improve transistor performance. High-k dielectrics typically have a dielectric constant greater than 3.9, the value for silicon dioxide.

Table 1. Record
IdentifierMLC-T-SEM-000164
FieldSemiconductors
SubjectFront-End Process
AbbreviationHKMG
Record as JSON 
{
  "id": "MLC-T-SEM-000164",
  "term": "High-k Metal Gate",
  "field": "Semiconductors",
  "definition": "A transistor gate stack incorporating a dielectric material with a high dielectric constant (high-k) and a metal gate electrode. This structure replaces the traditional polysilicon gate and silicon dioxide dielectric to reduce gate leakage current and improve transistor performance. High-k dielectrics typically have a dielectric constant greater than 3.9, the value for silicon dioxide.",
  "abbreviation": "HKMG",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/high-k-metal-gate/"
}

Record 164 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.