MLchartDataset catalogue

Time dependent dielectric breakdown

Term · Semiconductors · MLC-T-SEM-000337

A failure mechanism in semiconductor devices where the dielectric material degrades over time under a constant electric field, eventually leading to a short circuit. This degradation is caused by the accumulation of defects within the dielectric layer. TDDB is a major reliability concern for gate oxides in MOSFETs, with lifetime often modeled by an exponential relationship to electric field.

Table 1. Record
IdentifierMLC-T-SEM-000337
FieldSemiconductors
SubjectTest & Reliability
AbbreviationTDDB
Record as JSON 
{
  "id": "MLC-T-SEM-000337",
  "term": "Time dependent dielectric breakdown",
  "field": "Semiconductors",
  "definition": "A failure mechanism in semiconductor devices where the dielectric material degrades over time under a constant electric field, eventually leading to a short circuit. This degradation is caused by the accumulation of defects within the dielectric layer. TDDB is a major reliability concern for gate oxides in MOSFETs, with lifetime often modeled by an exponential relationship to electric field.",
  "abbreviation": "TDDB",
  "subject": "Test & Reliability",
  "url": "https://mlchart.com/terminology/semiconductors/time-dependent-dielectric-breakdown/"
}

Record 353 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.