MLchartDataset catalogue

Negative-bias temperature instability

Term · Semiconductors · MLC-T-SEM-000226

A reliability degradation mechanism observed in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) where the threshold voltage shifts over time when subjected to negative gate bias at elevated temperatures. This shift is caused by the generation of interface traps and positive charges within the gate dielectric. NBTI can lead to reduced device performance and eventual circuit malfunction, particularly in advanced technology nodes.

Table 1. Record
IdentifierMLC-T-SEM-000226
FieldSemiconductors
SubjectTest & Reliability
AbbreviationNBTI
Record as JSON
{
  "id": "MLC-T-SEM-000226",
  "term": "Negative-bias temperature instability",
  "field": "Semiconductors",
  "definition": "A reliability degradation mechanism observed in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) where the threshold voltage shifts over time when subjected to negative gate bias at elevated temperatures. This shift is caused by the generation of interface traps and positive charges within the gate dielectric. NBTI can lead to reduced device performance and eventual circuit malfunction, particularly in advanced technology nodes.",
  "abbreviation": "NBTI",
  "subject": "Test & Reliability",
  "url": "https://mlchart.com/terminology/semiconductors/negative-bias-temperature-instability/"
}

Record 233 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.