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Gate oxide

Term · Semiconductors · MLC-T-SEM-000375

A thin insulating layer, typically silicon dioxide (SiO2) or a high-k dielectric material, located between the gate electrode and the semiconductor substrate in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This dielectric layer controls the electric field applied to the channel, modulating the flow of current. Its thickness and quality are key determinants of transistor switching speed and leakage current.

Table 1. Record
IdentifierMLC-T-SEM-000375
FieldSemiconductors
SubjectFront-End Process
Record as JSON 
{
  "id": "MLC-T-SEM-000375",
  "term": "Gate oxide",
  "field": "Semiconductors",
  "definition": "A thin insulating layer, typically silicon dioxide (SiO2) or a high-k dielectric material, located between the gate electrode and the semiconductor substrate in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This dielectric layer controls the electric field applied to the channel, modulating the flow of current. Its thickness and quality are key determinants of transistor switching speed and leakage current.",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/gate-oxide/"
}

Record 148 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.