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Term · Semiconductors · MLC-T-SEM-000313

A dielectric material deposited and then anisotropically etched to form insulating sidewalls along the edges of a patterned feature, such as a polysilicon gate. These structures define the precise dimensions of source/drain extensions and prevent short circuits between the gate and subsequently deposited metal contacts. Silicon nitride and silicon dioxide are common spacer materials.

Table 1. Record
IdentifierMLC-T-SEM-000313
FieldSemiconductors
SubjectFront-End Process
Record as JSON 
{
  "id": "MLC-T-SEM-000313",
  "term": "Spacer",
  "field": "Semiconductors",
  "definition": "A dielectric material deposited and then anisotropically etched to form insulating sidewalls along the edges of a patterned feature, such as a polysilicon gate. These structures define the precise dimensions of source/drain extensions and prevent short circuits between the gate and subsequently deposited metal contacts. Silicon nitride and silicon dioxide are common spacer materials.",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/spacer/"
}

Record 327 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.