MLchartDataset catalogue

Ion implantation

Term · Semiconductors · MLC-T-SEM-000182

A process used to introduce dopant atoms into a semiconductor material to modify its electrical properties. Energetic ions of a specific element are accelerated and directed into the wafer, where they embed themselves within the crystal lattice. The depth and concentration of the implanted ions are precisely controlled by adjusting the ion beam energy and dose.

Table 1. Record
IdentifierMLC-T-SEM-000182
FieldSemiconductors
SubjectFront-End Process
Record as JSON 
{
  "id": "MLC-T-SEM-000182",
  "term": "Ion implantation",
  "field": "Semiconductors",
  "definition": "A process used to introduce dopant atoms into a semiconductor material to modify its electrical properties. Energetic ions of a specific element are accelerated and directed into the wafer, where they embed themselves within the crystal lattice. The depth and concentration of the implanted ions are precisely controlled by adjusting the ion beam energy and dose.",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/ion-implantation/"
}

Record 185 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.