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Diffusion

Term · Semiconductors · MLC-T-SEM-000096

A high-temperature process in semiconductor manufacturing where dopant atoms are introduced into a silicon wafer and then allowed to spread into the crystal lattice. This movement of atoms from a region of higher concentration to lower concentration modifies the electrical properties of the silicon, creating p-type or n-type regions. Diffusion is performed in furnaces at temperatures ranging from 900 to 1200 degrees Celsius.

Table 1. Record
IdentifierMLC-T-SEM-000096
FieldSemiconductors
SubjectFront-End Process
Record as JSON 
{
  "id": "MLC-T-SEM-000096",
  "term": "Diffusion",
  "field": "Semiconductors",
  "definition": "A high-temperature process in semiconductor manufacturing where dopant atoms are introduced into a silicon wafer and then allowed to spread into the crystal lattice. This movement of atoms from a region of higher concentration to lower concentration modifies the electrical properties of the silicon, creating p-type or n-type regions. Diffusion is performed in furnaces at temperatures ranging from 900 to 1200 degrees Celsius.",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/diffusion/"
}

Record 92 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.