MLchartDataset catalogue

Rapid thermal anneal

Term · Semiconductors · MLC-T-SEM-000280

A semiconductor manufacturing process that uses high-intensity lamps or lasers to rapidly heat a wafer to a high temperature for a very short duration, typically seconds. This technique is employed for dopant activation, defect repair, and silicide formation, minimizing dopant diffusion compared to conventional furnace annealing. RTA systems achieve heating rates of hundreds of degrees Celsius per second.

Table 1. Record
IdentifierMLC-T-SEM-000280
FieldSemiconductors
SubjectFront-End Process
AbbreviationRTA
Record as JSON 
{
  "id": "MLC-T-SEM-000280",
  "term": "Rapid thermal anneal",
  "field": "Semiconductors",
  "definition": "A semiconductor manufacturing process that uses high-intensity lamps or lasers to rapidly heat a wafer to a high temperature for a very short duration, typically seconds. This technique is employed for dopant activation, defect repair, and silicide formation, minimizing dopant diffusion compared to conventional furnace annealing. RTA systems achieve heating rates of hundreds of degrees Celsius per second.",
  "abbreviation": "RTA",
  "subject": "Front-End Process",
  "url": "https://mlchart.com/terminology/semiconductors/rapid-thermal-anneal/"
}

Record 289 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.