Post exposure bake

{
  "id": "MLC-T-SEM-000258",
  "term": "Post exposure bake",
  "field": "Semiconductors",
  "definition": "A controlled heating step applied to a photoresist-coated wafer immediately after it has been exposed to patterned light in a lithography tool. This Post Exposure Bake, or PEB, is used with chemically amplified resists to drive the acid-catalyzed reaction that changes the resist's solubility in the developer. The temperature and duration of the bake, often around 90-130°C for 60-90 seconds, are precisely controlled to manage the final feature size and profile.",
  "abbreviation": "PEB",
  "subject": "Lithography & Patterning",
  "url": "https://mlchart.com/terminology/semiconductors/post-exposure-bake/"
}