MLchartDataset catalogue

RCA clean

Term · Semiconductors · MLC-T-SEM-000281

A sequential wet-cleaning procedure for silicon wafers developed at the Radio Corporation of America. The process uses two standardized solutions: Standard Clean 1 (SC-1), an ammonia-peroxide mixture, removes organic residues and particles, while Standard Clean 2 (SC-2), a hydrochloric acid-peroxide mixture, removes metallic contaminants. A dilute hydrofluoric acid dip is often included to remove native oxide.

Table 1. Record
IdentifierMLC-T-SEM-000281
FieldSemiconductors
SubjectDeposition, Etch & Clean
Record as JSON 
{
  "id": "MLC-T-SEM-000281",
  "term": "RCA clean",
  "field": "Semiconductors",
  "definition": "A sequential wet-cleaning procedure for silicon wafers developed at the Radio Corporation of America. The process uses two standardized solutions: Standard Clean 1 (SC-1), an ammonia-peroxide mixture, removes organic residues and particles, while Standard Clean 2 (SC-2), a hydrochloric acid-peroxide mixture, removes metallic contaminants. A dilute hydrofluoric acid dip is often included to remove native oxide.",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/rca-clean/"
}

Record 290 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.