Wet etch
Term · Semiconductors · MLC-T-SEM-000360
A process in semiconductor fabrication that uses liquid chemical solutions to selectively remove material from a wafer surface. This method relies on the chemical reactivity between the etchant and the material to be removed, often with high selectivity to underlying layers. Common etchants include hydrofluoric acid for silicon dioxide and phosphoric acid for silicon nitride.
| Identifier | MLC-T-SEM-000360 |
|---|---|
| Field | Semiconductors |
| Subject | Deposition, Etch & Clean |
Record as JSON
{
"id": "MLC-T-SEM-000360",
"term": "Wet etch",
"field": "Semiconductors",
"definition": "A process in semiconductor fabrication that uses liquid chemical solutions to selectively remove material from a wafer surface. This method relies on the chemical reactivity between the etchant and the material to be removed, often with high selectivity to underlying layers. Common etchants include hydrofluoric acid for silicon dioxide and phosphoric acid for silicon nitride.",
"subject": "Deposition, Etch & Clean",
"url": "https://mlchart.com/terminology/semiconductors/wet-etch/"
}
Record 380 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.