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Plasma enhanced CVD

Term · Semiconductors · MLC-T-SEM-000253

A chemical vapor deposition technique that uses plasma to supply the energy for chemical reactions, allowing deposition at lower temperatures than conventional CVD. Gaseous precursors are introduced into a plasma, where they are dissociated into reactive species that then deposit on the substrate. PECVD is commonly used for depositing silicon nitride and silicon dioxide films, particularly on temperature-sensitive substrates.

Table 1. Record
IdentifierMLC-T-SEM-000253
FieldSemiconductors
SubjectDeposition, Etch & Clean
AbbreviationPECVD
Record as JSON 
{
  "id": "MLC-T-SEM-000253",
  "term": "Plasma enhanced CVD",
  "field": "Semiconductors",
  "definition": "A chemical vapor deposition technique that uses plasma to supply the energy for chemical reactions, allowing deposition at lower temperatures than conventional CVD. Gaseous precursors are introduced into a plasma, where they are dissociated into reactive species that then deposit on the substrate. PECVD is commonly used for depositing silicon nitride and silicon dioxide films, particularly on temperature-sensitive substrates.",
  "abbreviation": "PECVD",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/plasma-enhanced-cvd/"
}

Record 262 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.