MLchartDataset catalogue

Plasma etch

Term · Semiconductors · MLC-T-SEM-000254

A dry etching process that uses an ionized gas, or plasma, to remove material from a wafer surface. Chemically reactive species (radicals) generated in the plasma react with the substrate to form volatile byproducts that are evacuated from the chamber. This method is predominantly chemical in nature, resulting in isotropic etching, where material is removed equally in all directions.

Table 1. Record
IdentifierMLC-T-SEM-000254
FieldSemiconductors
SubjectDeposition, Etch & Clean
Record as JSON 
{
  "id": "MLC-T-SEM-000254",
  "term": "Plasma etch",
  "field": "Semiconductors",
  "definition": "A dry etching process that uses an ionized gas, or plasma, to remove material from a wafer surface. Chemically reactive species (radicals) generated in the plasma react with the substrate to form volatile byproducts that are evacuated from the chamber. This method is predominantly chemical in nature, resulting in isotropic etching, where material is removed equally in all directions.",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/plasma-etch/"
}

Record 263 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.