MLchartDataset catalogue

Loading effect

Term · Semiconductors · MLC-T-SEM-000202

A phenomenon observed in plasma etching where the etch rate of a material depends on the exposed area of the material on the wafer. As the total exposed area increases, the etch rate tends to decrease due to depletion of reactive species in the plasma. This effect can lead to non-uniform etch depths across a wafer with varying pattern densities.

Table 1. Record
IdentifierMLC-T-SEM-000202
FieldSemiconductors
SubjectDeposition, Etch & Clean
Record as JSON 
{
  "id": "MLC-T-SEM-000202",
  "term": "Loading effect",
  "field": "Semiconductors",
  "definition": "A phenomenon observed in plasma etching where the etch rate of a material depends on the exposed area of the material on the wafer. As the total exposed area increases, the etch rate tends to decrease due to depletion of reactive species in the plasma. This effect can lead to non-uniform etch depths across a wafer with varying pattern densities.",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/loading-effect/"
}

Record 207 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.