MLchartDataset catalogue

Dishing

Term · Semiconductors · MLC-T-SEM-000098

A form of topography that occurs during chemical mechanical planarization (CMP), characterized by the excessive removal of material in the center of a wide metal feature, creating a concave or dish-like profile. This effect is caused by the polishing pad deforming into the softer metal line more than into the surrounding harder dielectric material. Dishing is measured in nanometers and can lead to open circuits or increased line resistance in the final device.

Table 1. Record
IdentifierMLC-T-SEM-000098
FieldSemiconductors
SubjectDeposition, Etch & Clean
Record as JSON 
{
  "id": "MLC-T-SEM-000098",
  "term": "Dishing",
  "field": "Semiconductors",
  "definition": "A form of topography that occurs during chemical mechanical planarization (CMP), characterized by the excessive removal of material in the center of a wide metal feature, creating a concave or dish-like profile. This effect is caused by the polishing pad deforming into the softer metal line more than into the surrounding harder dielectric material. Dishing is measured in nanometers and can lead to open circuits or increased line resistance in the final device.",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/dishing/"
}

Record 94 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.