MLchartDataset catalogue

Endpoint detection

Term · Semiconductors · MLC-T-SEM-000114

A technique for determining the precise moment to stop a wafer fabrication process, such as plasma etching or chemical mechanical planarization, by monitoring a real-time signal that indicates the process has reached its target. The signal is derived from a physical or chemical change, like a shift in the optical emission spectrum of the plasma as an underlying layer becomes exposed. Common methods include optical emission spectroscopy, which detects changes in plasma species, and laser interferometry, which measures the thickness of transparent films.

Table 1. Record
IdentifierMLC-T-SEM-000114
FieldSemiconductors
SubjectDeposition, Etch & Clean
Record as JSON 
{
  "id": "MLC-T-SEM-000114",
  "term": "Endpoint detection",
  "field": "Semiconductors",
  "definition": "A technique for determining the precise moment to stop a wafer fabrication process, such as plasma etching or chemical mechanical planarization, by monitoring a real-time signal that indicates the process has reached its target. The signal is derived from a physical or chemical change, like a shift in the optical emission spectrum of the plasma as an underlying layer becomes exposed. Common methods include optical emission spectroscopy, which detects changes in plasma species, and laser interferometry, which measures the thickness of transparent films.",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/endpoint-detection/"
}

Record 111 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.