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Reactive ion etch

Term · Semiconductors · MLC-T-SEM-000383

A form of dry etching that uses chemically reactive plasma to selectively remove material from a substrate. In reactive ion etch (RIE), an RF electromagnetic field ionizes a gas mixture, creating ions that are accelerated toward the wafer, combining physical bombardment with chemical reactions at the surface. This process provides greater directionality and anisotropy compared to purely chemical wet etching.

Table 1. Record
IdentifierMLC-T-SEM-000383
FieldSemiconductors
SubjectDeposition, Etch & Clean
AbbreviationRIE
Record as JSON 
{
  "id": "MLC-T-SEM-000383",
  "term": "Reactive ion etch",
  "field": "Semiconductors",
  "definition": "A form of dry etching that uses chemically reactive plasma to selectively remove material from a substrate. In reactive ion etch (RIE), an RF electromagnetic field ionizes a gas mixture, creating ions that are accelerated toward the wafer, combining physical bombardment with chemical reactions at the surface. This process provides greater directionality and anisotropy compared to purely chemical wet etching.",
  "abbreviation": "RIE",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/reactive-ion-etch/"
}

Record 291 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.