Focused ion beam
Term · Semiconductors · MLC-T-SEM-000138
A technology that uses a finely focused beam of ions, typically gallium, to mill, deposit, or image materials at the nanoscale. Focused ion beam (FIB) systems are employed in semiconductor manufacturing for circuit editing, cross-sectional analysis, and defect localization. The ion beam can remove material with nanometer precision or deposit conductive or insulating films.
| Identifier | MLC-T-SEM-000138 |
|---|---|
| Field | Semiconductors |
| Subject | Metrology, Inspection & Yield |
| Abbreviation | FIB |
Record as JSON
{
"id": "MLC-T-SEM-000138",
"term": "Focused ion beam",
"field": "Semiconductors",
"definition": "A technology that uses a finely focused beam of ions, typically gallium, to mill, deposit, or image materials at the nanoscale. Focused ion beam (FIB) systems are employed in semiconductor manufacturing for circuit editing, cross-sectional analysis, and defect localization. The ion beam can remove material with nanometer precision or deposit conductive or insulating films.",
"abbreviation": "FIB",
"subject": "Metrology, Inspection & Yield",
"url": "https://mlchart.com/terminology/semiconductors/focused-ion-beam/"
}
Record 137 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.