MLchartDataset catalogue

Float zone

Term · Semiconductors · MLC-T-SEM-000137

A method for producing ultra-high purity single-crystal semiconductor ingots, particularly silicon, by passing a molten zone through a polycrystalline rod. This technique minimizes contamination by avoiding contact with a crucible, making it suitable for high-power device applications. Float zone silicon typically exhibits higher resistivity and longer minority carrier lifetimes compared to Czochralski-grown silicon.

Table 1. Record
IdentifierMLC-T-SEM-000137
FieldSemiconductors
SubjectMaterials & Wafers
AbbreviationFZ
Record as JSON 
{
  "id": "MLC-T-SEM-000137",
  "term": "Float zone",
  "field": "Semiconductors",
  "definition": "A method for producing ultra-high purity single-crystal semiconductor ingots, particularly silicon, by passing a molten zone through a polycrystalline rod. This technique minimizes contamination by avoiding contact with a crucible, making it suitable for high-power device applications. Float zone silicon typically exhibits higher resistivity and longer minority carrier lifetimes compared to Czochralski-grown silicon.",
  "abbreviation": "FZ",
  "subject": "Materials & Wafers",
  "url": "https://mlchart.com/terminology/semiconductors/float-zone/"
}

Record 136 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.