Critical dimension scanning electron microscope

{
  "id": "MLC-T-SEM-000074",
  "term": "Critical dimension scanning electron microscope",
  "field": "Semiconductors",
  "definition": "An automated metrology instrument that uses a focused beam of electrons to create high-resolution images of semiconductor wafer features for measurement. The critical dimension scanning electron microscope, or CD-SEM, is specifically designed for precise, repeatable measurement of the width and spacing of patterned lines, such as transistor gates and interconnects. Measurement precision for advanced nodes is on the order of angstroms, requiring sophisticated image processing algorithms to determine feature edges.",
  "abbreviation": "CD-SEM",
  "subject": "Metrology, Inspection & Yield",
  "url": "https://mlchart.com/terminology/semiconductors/critical-dimension-scanning-electron-microscope/"
}