MLchartDataset catalogue

Low pressure CVD

Term · Semiconductors · MLC-T-SEM-000205

A chemical vapor deposition technique performed at sub-atmospheric pressures, typically ranging from 0.1 to 10 Torr. This process uses gaseous precursors that react on the heated substrate surface to form a solid thin film. LPCVD offers good film uniformity and step coverage, making it suitable for depositing polysilicon, silicon nitride, and silicon dioxide.

Table 1. Record
IdentifierMLC-T-SEM-000205
FieldSemiconductors
SubjectDeposition, Etch & Clean
AbbreviationLPCVD
Record as JSON 
{
  "id": "MLC-T-SEM-000205",
  "term": "Low pressure CVD",
  "field": "Semiconductors",
  "definition": "A chemical vapor deposition technique performed at sub-atmospheric pressures, typically ranging from 0.1 to 10 Torr. This process uses gaseous precursors that react on the heated substrate surface to form a solid thin film. LPCVD offers good film uniformity and step coverage, making it suitable for depositing polysilicon, silicon nitride, and silicon dioxide.",
  "abbreviation": "LPCVD",
  "subject": "Deposition, Etch & Clean",
  "url": "https://mlchart.com/terminology/semiconductors/low-pressure-cvd/"
}

Record 210 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.