MLchartDataset catalogue

Watermark

Term · Semiconductors · MLC-T-SEM-000357

A localized residue defect left on a wafer when a droplet of rinse water dries on the surface, usually a hydrated silicon oxide spot formed as silicon dissolves in oxygen-bearing water. Hydrophobic wafers, such as those finished with an HF step, are especially prone to them. Light-scattering inspection finds them, and they can cause defects in later steps such as oxide growth or film deposition, which is why Marangoni and spin-rinse drying are used.

Table 1. Record
IdentifierMLC-T-SEM-000357
FieldSemiconductors
SubjectCleanroom, Contamination & EHS
Record as JSON 
{
  "id": "MLC-T-SEM-000357",
  "term": "Watermark",
  "field": "Semiconductors",
  "definition": "A localized residue defect left on a wafer when a droplet of rinse water dries on the surface, usually a hydrated silicon oxide spot formed as silicon dissolves in oxygen-bearing water. Hydrophobic wafers, such as those finished with an HF step, are especially prone to them. Light-scattering inspection finds them, and they can cause defects in later steps such as oxide growth or film deposition, which is why Marangoni and spin-rinse drying are used.",
  "subject": "Cleanroom, Contamination & EHS",
  "url": "https://mlchart.com/terminology/semiconductors/watermark/"
}

Record 377 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.