Patent · US10163869B2 · B2 · US
Transferring method, manufacturing method, device and electronic apparatus of micro-LED
- (11) Publication number
- US10163869B2
- (21) Application number
- 15/562,411
- (22) Filing date
- 2015-10-20
- (30) Priority date
- 2015-10-20
- (43) Publication date
- 2018-12-25
- (45) Date of grant
- 2018-12-25
- (51) IPC
- H01L 25/075; H01L 33/00; H10P 72/10; H10P 72/30; H10P 95/00
- (52) CPC
- H10W Generic packages, interconnections, connectors or other constructional details of devices covered by class H10: 90/00, 72/01271, 72/0198, 72/0711, 72/072, 72/07207, 72/07211, 72/07236, 72/073, 72/07307, 72/074, 72/241, 72/252, 90/724, 99/00
- B32B Layered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form: 37/025
- B81C Processes or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems: 3/001
- H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/673, 21/67781, 2224/95, 25/0753, 33/0079
- H10H Inorganic light-emitting semiconductor devices having potential barriers: 20/018
- H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/10, 72/3412, 72/74, 72/7414, 72/7434, 72/744, 74/23
- (73) Assignee
- Goertek Inc
- (72) Inventors
- Quanbo Zou; Zhe Wang
- (54) Title
- Transferring method, manufacturing method, device and electronic apparatus of micro-LED
- (57) Abstract
The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.
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Claims (10)
- A method for transferring micro-LED at wafer level, comprising: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate from the original substrate side with laser, to lift-off selected micro-LEDs from the original substrate; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.
- The method according to claim 1, wherein the micro-LEDs are vertically-structured micro-LEDs, and the method further comprises: forming N electrodes on the micro-LEDs on the receiving substrate; and performing encapsulation on the N electrodes.
- The method according to claim 1, wherein the first bonding layer is a UV or light releasable tape.
- The method according to claim 3, wherein the carrier substrate is a PET plate.
- The method according to claim 1, wherein the partial release and the full release are performed by light exposure.
- The method according to claim 1, wherein the second bonding layer is released by thermal release.
- The method according to claim 1, wherein the micro-LEDs are arranged on the receiving substrate in a redundant manner.
- The method according to claim 1, wherein a contactless action is applied onto the micro-LEDs during the partial release.
- The method according to claim 8, wherein the contactless action is at least one of gravity, electrostatic force and electromagnetic force.
- A method for manufacturing a micro-LED device, comprising transferring micro-LEDs onto a receiving substrate of the micro-LED device by using the method according to claim 1.
Description
The present invention relates to Micro-Light Emitting Diode (micro LED) array for display, and in particular, to a method for transferring micro-LED at wafer level, a method for manufacturing a micro-LED device, a micro-LED device and an electronic apparatus containing a micro-LED device.
The micro-LED technology refers to the LED array of small size integrated on a substrate with high density. Currently, the micro-LED technology is starting development, and it is expected in the industry that a high-quality micro-LED product comes into the market. High-quality micro-LED will have a deep affection on the conventional display products such as LCD/OLED that have already been put into the market.
In the process of manufacturing micro-LEDs, micro-LEDs are first formed on a donor wafer, and then the micro-LEDs are transferred to a receiving substrate. The receiving substrate is a display screen, for example.
One difficulty during manufacturing a micro-LED lies in how to transfer a micro-LED from a donor wafer to a receiving substrate. In the prior art, the transfer is generally performed by means of electrostatic pick-up. A transfer head array will be needed during the electrostatic pick-up. The structure of the transfer head array is relatively complicated, and the stability thereof shall be considered. An extra cost shall be paid for manufacturing a transfer head array. A phase change shall be made before pick-up with the transfer head array.
Citations (10)
- US20100186883A1
- US8333860B1
- US8426227B1
- CN104350613A
- US20140027709A1
- US20140094878A1
- CN104838508A
- US20170338374A1
- CN105518877A
- US20180069149A1
Record as JSON
{
"publication_number": "US10163869B2",
"country": "US",
"kind": "B2",
"title": "Transferring method, manufacturing method, device and electronic apparatus of micro-LED",
"abstract": "The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.",
"claims": [
"1. A method for transferring micro-LED at wafer level, comprising: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate from the original substrate side with laser, to lift-off selected micro-LEDs from the original substrate; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.",
"2. The method according to claim 1, wherein the micro-LEDs are vertically-structured micro-LEDs, and the method further comprises: forming N electrodes on the micro-LEDs on the receiving substrate; and performing encapsulation on the N electrodes.",
"3. The method according to claim 1, wherein the first bonding layer is a UV or light releasable tape.",
"4. The method according to claim 3, wherein the carrier substrate is a PET plate.",
"5. The method according to claim 1, wherein the partial release and the full release are performed by light exposure.",
"6. The method according to claim 1, wherein the second bonding layer is released by thermal release.",
"7. The method according to claim 1, wherein the micro-LEDs are arranged on the receiving substrate in a redundant manner.",
"8. The method according to claim 1, wherein a contactless action is applied onto the micro-LEDs during the partial release.",
"9. The method according to claim 8, wherein the contactless action is at least one of gravity, electrostatic force and electromagnetic force.",
"10. A method for manufacturing a micro-LED device, comprising transferring micro-LEDs onto a receiving substrate of the micro-LED device by using the method according to claim 1."
],
"description_excerpt": "The present invention relates to Micro-Light Emitting Diode (micro LED) array for display, and in particular, to a method for transferring micro-LED at wafer level, a method for manufacturing a micro-LED device, a micro-LED device and an electronic apparatus containing a micro-LED device.\n\nThe micro-LED technology refers to the LED array of small size integrated on a substrate with high density. Currently, the micro-LED technology is starting development, and it is expected in the industry that a high-quality micro-LED product comes into the market. High-quality micro-LED will have a deep affection on the conventional display products such as LCD/OLED that have already been put into the market.\n\nIn the process of manufacturing micro-LEDs, micro-LEDs are first formed on a donor wafer, and then the micro-LEDs are transferred to a receiving substrate. The receiving substrate is a display screen, for example.\n\nOne difficulty during manufacturing a micro-LED lies in how to transfer a micro-LED from a donor wafer to a receiving substrate. In the prior art, the transfer is generally performed by means of electrostatic pick-up. A transfer head array will be needed during the electrostatic pick-up. The structure of the transfer head array is relatively complicated, and the stability thereof shall be considered. An extra cost shall be paid for manufacturing a transfer head array. A phase change shall be made before pick-up with the transfer head array.",
"cpc": [
"H10W 90/00",
"B32B 37/025",
"B81C 3/001",
"H01L 21/673",
"H01L 21/67781",
"H01L 2224/95",
"H01L 25/0753",
"H01L 33/0079",
"H10H 20/018",
"H10P 72/10",
"H10P 72/3412",
"H10P 72/74",
"H10P 72/7414",
"H10P 72/7434",
"H10P 72/744",
"H10P 74/23",
"H10W 72/01271",
"H10W 72/0198",
"H10W 72/0711",
"H10W 72/072",
"H10W 72/07207",
"H10W 72/07211",
"H10W 72/07236",
"H10W 72/073",
"H10W 72/07307",
"H10W 72/074",
"H10W 72/241",
"H10W 72/252",
"H10W 90/724",
"H10W 99/00"
],
"ipc": [
"H01L 25/075",
"H01L 33/00",
"H10P 72/10",
"H10P 72/30",
"H10P 95/00"
],
"assignees": [
"Goertek Inc"
],
"inventors": [
"Quanbo Zou",
"Zhe Wang"
],
"filing_date": "2015-10-20",
"publication_date": "2018-12-25",
"grant_date": "2018-12-25",
"priority_date": "2015-10-20",
"application_number": "US-201515562411-A",
"family_id": "57359247",
"cited_by_count": 12,
"citations": [
"US20100186883A1",
"US8333860B1",
"US8426227B1",
"CN104350613A",
"US20140027709A1",
"US20140094878A1",
"CN104838508A",
"US20170338374A1",
"CN105518877A",
"US20180069149A1"
]
}
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