Stabilization structure including shear release posts

{
  "publication_number": "US9217541B2",
  "country": "US",
  "kind": "B2",
  "title": "Stabilization structure including shear release posts",
  "abstract": "A stabilization structure includes a stabilization layer on a carrier substrate. The stabilization layer includes an array of staging cavities. An array of micro devices are within the array of staging cavities. Each micro device is laterally attached to a shear release post laterally extending from a sidewall of a staging cavity. A pressure is applied to the array of micro devices from the array of transfer heads to shear the array of micro devices off the shear release posts. The sheared off micro devices are picked up from the carrier substrate using the array of transfer heads.",
  "claims": [
    "1. A stabilization structure comprising: a carrier substrate; a stabilization layer on the carrier substrate, the stabilization layer including an array of staging cavities; and an array of micro devices within the array of staging cavities, wherein each micro device is laterally attached to a shear release post laterally extending from a sidewall of a staging cavity.",
    "2. The structure of claim 1, wherein each micro device is secured above a bottom surface of the staging cavity of the stabilization layer.",
    "3. The structure of claim 1, wherein the stabilization layer is formed of a thermoset material.",
    "4. The structure of claim 3, wherein the thermoset material includes benzocyclobutene (BCB).",
    "5. The structure of claim 1, wherein each micro device is embedded in a sacrificial release layer.",
    "6. The structure of claim 5, wherein the sacrificial release layer comprises an oxide material.",
    "7. The structure of claim 1, wherein each micro device is a micro chip.",
    "8. The structure of claim 1, wherein each micro device is a micro light emitting diode (LED) device.",
    "9. The structure of claim 1, wherein each micro device has a maximum width of 1 μm-100 μm.",
    "10. The structure of claim 9, wherein each micro device is attached to a shear release post with an attachment area having a height that is less than a height of the micro device.",
    "11. The structure of claim 10, wherein the height of the attachment area of the micro device is up to 50% of the height of the micro device.",
    "12. The structure of claim 5, wherein the micro devices are thicker than the sacrificial release layer.",
    "13. The structure of claim 1, wherein the shear release post is formed axially between adjacent micro devices.",
    "14. The structure of claim 1, wherein the shear release post is formed diagonally between adjacent micro devices."
  ],
  "description_excerpt": "Embodiments as described herein relate generally to micro devices, and more specifically, to stabilization and transfer of micro devices.\n\nIntegration and packaging issues are one of the main obstacles for the commercialization of micro devices e.g., radio frequency (RF) microelectromechanical systems (MEMS) microswitches, light-emitting diode (LED) display systems, MEMS or quartz-based oscillators.\n\nTraditional technologies for transferring of devices include transfer by wafer bonding from a transfer wafer to a receiving wafer. One such implementation is “direct printing” involving one bonding step of an array of devices from a transfer wafer to a receiving wafer, followed by removal of the transfer wafer. Another such implementation is “transfer printing” involving two bonding/de-bonding steps. In transfer printing a transfer wafer may pick up an array of devices from a donor wafer, and then bond the array of devices to a receiving wafer, followed by removal of the transfer wafer.\n\nSome printing process variations have been developed where a device can be selectively bonded and de-bonded during the transfer process. In both traditional and variations of the direct printing and transfer printing technologies, the transfer wafer is de-bonded from a device after bonding the device to the receiving wafer. In addition, the entire transfer wafer with the array of devices is involved in the transfer process.\n\nAnother existing technique for transferring semiconductor die uses elastomeric stamps. In this technique the surface of the stamp adheres to the surface of the semiconductor die via van der Waals forces.",
  "cpc": [
    "H10W 72/00",
    "B81C 99/002",
    "F21K 9/00",
    "H01L 24/00",
    "H01L 33/0095",
    "H10H 20/01",
    "H10P 72/7434",
    "H10P 95/11",
    "H10W 72/01904",
    "H10W 72/0198",
    "H10W 72/944",
    "Y10T 29/49002"
  ],
  "ipc": [
    "H05K 7/08",
    "F21K 99/00",
    "H10D 62/10",
    "H01L 23/00"
  ],
  "assignees": [
    "LuxVue Technology Corp"
  ],
  "inventors": [
    "Stephen Bathurst",
    "Hsin-Hua Hu",
    "Andreas Bibl"
  ],
  "filing_date": "2013-05-14",
  "publication_date": "2015-12-22",
  "grant_date": "2015-12-22",
  "priority_date": "2013-05-14",
  "application_number": "US-201313894332-A",
  "family_id": "51895644",
  "cited_by_count": 181,
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