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Direct bandgap semiconductor

Term · Chemistry · MLC-T-CHM-003249

A semiconductor material in which the minimum energy of the conduction band and the maximum energy of the valence band occur at the same momentum in reciprocal space. This alignment allows electrons to transition directly from the valence band to the conduction band by emitting a photon. Gallium arsenide (GaAs) is a common direct bandgap semiconductor.

Table 1. Record
IdentifierMLC-T-CHM-003249
FieldChemistry
SubjectPhysical and Biophysical Chemistry
ReferencesPAC, 2011, 83, 931. 'Glossary of terms used in photocatalysis and radiation catalysis (IUPAC Recommendations 2011)' on page 947 (https://doi.org/10.1351/PAC-REC-09-09-36)
See alsoIndirect bandgap semiconductor
Record as JSON
{
  "id": "MLC-T-CHM-003249",
  "term": "Direct bandgap semiconductor",
  "field": "Chemistry",
  "definition": "A semiconductor material in which the minimum energy of the conduction band and the maximum energy of the valence band occur at the same momentum in reciprocal space. This alignment allows electrons to transition directly from the valence band to the conduction band by emitting a photon. Gallium arsenide (GaAs) is a common direct bandgap semiconductor.",
  "subject": "Physical and Biophysical Chemistry",
  "see_also": [
    "indirect bandgap semiconductor"
  ],
  "references": [
    "PAC, 2011, 83, 931. 'Glossary of terms used in photocatalysis and radiation catalysis (IUPAC Recommendations 2011)' on page 947 (https://doi.org/10.1351/PAC-REC-09-09-36)"
  ],
  "url": "https://mlchart.com/terminology/chemistry/direct-bandgap-semiconductor/"
}

Record 3,455 of 13,676 in Chemistry terminology (MLC-0109). Request the full dataset.