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Gallium arsenide

Term · Semiconductors · MLC-T-SEM-000145

A compound semiconductor formed from gallium and arsenic, known for its high electron mobility and direct bandgap. This material is used in high-frequency microwave and millimeter-wave integrated circuits, as well as in optoelectronic devices such as laser diodes and LEDs. Its electron mobility is approximately five times higher than that of silicon.

Table 1. Record
IdentifierMLC-T-SEM-000145
FieldSemiconductors
SubjectMaterials & Wafers
AbbreviationGaAs
Record as JSON
{
  "id": "MLC-T-SEM-000145",
  "term": "Gallium arsenide",
  "field": "Semiconductors",
  "definition": "A compound semiconductor formed from gallium and arsenic, known for its high electron mobility and direct bandgap. This material is used in high-frequency microwave and millimeter-wave integrated circuits, as well as in optoelectronic devices such as laser diodes and LEDs. Its electron mobility is approximately five times higher than that of silicon.",
  "abbreviation": "GaAs",
  "subject": "Materials & Wafers",
  "url": "https://mlchart.com/terminology/semiconductors/gallium-arsenide/"
}

Record 144 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.