Gallium arsenide
Term · Semiconductors · MLC-T-SEM-000145
A compound semiconductor formed from gallium and arsenic, known for its high electron mobility and direct bandgap. This material is used in high-frequency microwave and millimeter-wave integrated circuits, as well as in optoelectronic devices such as laser diodes and LEDs. Its electron mobility is approximately five times higher than that of silicon.
| Identifier | MLC-T-SEM-000145 |
|---|---|
| Field | Semiconductors |
| Subject | Materials & Wafers |
| Abbreviation | GaAs |
Record as JSON
{
"id": "MLC-T-SEM-000145",
"term": "Gallium arsenide",
"field": "Semiconductors",
"definition": "A compound semiconductor formed from gallium and arsenic, known for its high electron mobility and direct bandgap. This material is used in high-frequency microwave and millimeter-wave integrated circuits, as well as in optoelectronic devices such as laser diodes and LEDs. Its electron mobility is approximately five times higher than that of silicon.",
"abbreviation": "GaAs",
"subject": "Materials & Wafers",
"url": "https://mlchart.com/terminology/semiconductors/gallium-arsenide/"
}
Record 144 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.