MLchartDataset catalogue

Bandgap

Term · Semiconductors · MLC-T-SEM-000037

The minimum energy required to excite an electron from a bound state in the valence band to a free state in the conduction band, enabling it to participate in electrical conduction. This energy range, where no electron states can exist, determines the material's electrical and optical properties. The bandgap for silicon is approximately 1.12 electronvolts (eV) at room temperature, while for gallium arsenide it is about 1.42 eV.

Table 1. Record
IdentifierMLC-T-SEM-000037
FieldSemiconductors
SubjectMaterials & Wafers
Record as JSON 
{
  "id": "MLC-T-SEM-000037",
  "term": "Bandgap",
  "field": "Semiconductors",
  "definition": "The minimum energy required to excite an electron from a bound state in the valence band to a free state in the conduction band, enabling it to participate in electrical conduction. This energy range, where no electron states can exist, determines the material's electrical and optical properties. The bandgap for silicon is approximately 1.12 electronvolts (eV) at room temperature, while for gallium arsenide it is about 1.42 eV.",
  "subject": "Materials & Wafers",
  "url": "https://mlchart.com/terminology/semiconductors/bandgap/"
}

Record 29 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.