Line-space patterning
Term · Chemistry · MLC-T-CHM-006644
A lithographic process that generates a repeating pattern of parallel lines and intervening spaces, typically using a polymer resist. The pattern is defined by its pitch, which is the sum of the width of one line and one adjacent space. This technique is widely employed in the fabrication of integrated circuits to create features like transistor gates and interconnects.
| Identifier | MLC-T-CHM-006644 |
|---|---|
| Field | Chemistry |
| Subject | Polymer |
| References | PAC, 2020, 92, 1861. 'Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)' on page 1876 (https://doi.org/10.1515/pac-2018-1215) |
Record as JSON
{
"id": "MLC-T-CHM-006644",
"term": "Line-space patterning",
"field": "Chemistry",
"definition": "A lithographic process that generates a repeating pattern of parallel lines and intervening spaces, typically using a polymer resist. The pattern is defined by its pitch, which is the sum of the width of one line and one adjacent space. This technique is widely employed in the fabrication of integrated circuits to create features like transistor gates and interconnects.",
"subject": "Polymer",
"references": [
"PAC, 2020, 92, 1861. 'Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)' on page 1876 (https://doi.org/10.1515/pac-2018-1215)"
],
"url": "https://mlchart.com/terminology/chemistry/line-space-patterning/"
}
Record 7,039 of 13,676 in Chemistry terminology (MLC-0109). Request the full dataset.