MLchartDataset catalogue

Photoresist

Term · Semiconductors · MLC-T-SEM-000248

A light-sensitive polymeric material used in photolithography to transfer a pattern from a photomask onto a semiconductor wafer. When exposed to ultraviolet light, the chemical properties of the photoresist change, allowing selective removal of either the exposed or unexposed regions during development. The remaining resist pattern then acts as a protective mask for subsequent etching or deposition steps, with typical film thicknesses ranging from hundreds of nanometers to several micrometers.

Table 1. Record
IdentifierMLC-T-SEM-000248
FieldSemiconductors
SubjectLithography & Patterning
Record as JSON
{
  "id": "MLC-T-SEM-000248",
  "term": "Photoresist",
  "field": "Semiconductors",
  "definition": "A light-sensitive polymeric material used in photolithography to transfer a pattern from a photomask onto a semiconductor wafer. When exposed to ultraviolet light, the chemical properties of the photoresist change, allowing selective removal of either the exposed or unexposed regions during development. The remaining resist pattern then acts as a protective mask for subsequent etching or deposition steps, with typical film thicknesses ranging from hundreds of nanometers to several micrometers.",
  "subject": "Lithography & Patterning",
  "url": "https://mlchart.com/terminology/semiconductors/photoresist/"
}

Record 257 of 390 in Semiconductors terminology (MLC-0108). Request the full dataset.