Extreme ultraviolet lithography

{
  "id": "MLC-T-CHM-004308",
  "term": "Extreme ultraviolet lithography",
  "field": "Chemistry",
  "definition": "A next-generation photolithography technique that uses extreme ultraviolet (EUV) radiation, typically at a wavelength of 13.5 nm, to pattern semiconductor devices. This method enables the fabrication of features with dimensions below 10 nanometers. It requires specialized optics and photoresists designed to absorb and respond to EUV light.",
  "subject": "Polymer",
  "see_also": [
    "photolithography",
    "resist"
  ],
  "references": [
    "PAC, 2020, 92, 1861. 'Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)' on page 1877 (https://doi.org/10.1515/pac-2018-1215)"
  ],
  "url": "https://mlchart.com/terminology/chemistry/extreme-ultraviolet-lithography/"
}