MLchartDataset catalogue

Patents full text · MLC-0201

CPC subclass H10P

Generic processes or apparatus for the manufacture or treatment of devices covered by class H10

264 patents · page 3 of 3

Table 1. Patents
No.PublicationTitlePublishedAssignee
201US8322542B2Cassette for receiving substrates2012-12-04LG Display Co Ltd
202US2012275886A1Transport system and transport method2012-11-01Muratec Automation Co Ltd
203US2012032311A1Multi component dielectric layer2012-02-09International Business Machines Corp
204US8071452B2Atomic layer deposition of hafnium lanthanum oxides2011-12-06ASM America Inc
205US2011263115A1Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors2011-10-27Applied Materials Inc
206US7982296B2Methods and devices for fabricating and assembling printable semiconductor elements2011-07-19University of Illinois System
207US7932123B2Release strategies for making transferable semiconductor structures, devices and device components2011-04-26University of Illinois System
208US2010324732A1Wafer center finding with a kalman filter2010-12-23Brooks Automation Inc
209US7795160B2ALD of metal silicate films2010-09-14ASM America Inc
210US2010213594A1Semiconductor device and a manufacturing method of the same2010-08-26Renesas Technology Corp
211US7694700B2Apparatus for transporting substrates under a controlled atmosphere2010-04-13Alcatel SA
212US2010045949A1Exposure apparatus, maintaining method and device fabricating method2010-02-25Nikon Corp
213US7530887B2Chemical mechanical polishing pad with controlled wetting2009-05-12Rohm and Haas Electronic Materials CMP Holdings Inc
214US2009111244A1Method for manufacturing semiconductor device2009-04-30Semiconductor Energy Laboratory Co Ltd
215US2009095956A1Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device2009-04-16
216US7489389B2Stage device with frame-shaped member movable in at least three degrees of freedom within a two-dimensional plane2009-02-10Nikon Corp
217US7335244B2Air-purifying device for a front-opening unified pod2008-02-26Cambridge Filter Japan Ltd
218US7334691B2Glass substrate cassette2008-02-26AU Optronics Corp
219US7222721B2Transferring apparatus, carrying apparatus, and transferring method2007-05-29Seiko Epson Corp
220US7122222B2Precursors for depositing silicon containing films and processes thereof2006-10-17Air Products and Chemicals Inc
221US2006134330A1Cluster tool architecture for processing a substrate2006-06-22Applied Materials Inc
222US7022211B2Semiconductor wafer holder and electroplating system for plating a semiconductor wafer2006-04-04Ebara Corp
223US7000648B2Device picker in handler2006-02-21Mirae Corp
224US6938505B2Chamber wafer detection2005-09-06Taiwan Semiconductor Manufacturing Co TSMC Ltd
225US2004241981A1Structure and method to fabricate ultra-thin si channel devices2004-12-02International Business Machines Corp
226US6780773B2Method of chemical mechanical polishing with high throughput and low dishing2004-08-24Applied Materials Inc
227US6683663B1Web fabrication of devices2004-01-27Alien Technology LLC
228US6664129B2Integrated circuits and methods for their fabrication2003-12-16Allvia Inc
229US6660700B2Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures2003-12-09Advanced Technology Materials Inc
230US6656017B2Method and apparatus for creating an open cell micro-environment for treating a substrate with an impingement spray2003-12-02
231US6654668B1Processing apparatus, processing system, distinguishing method, and detecting method2003-11-25Tokyo Electron Ltd
232US6592671B2Apparatus for clamping a planar substrate2003-07-15Delsys Pharmaceutical Corp
233US6576138B2Method for purifying semiconductor gases2003-06-10Praxair Technology Inc
234US6570253B1Multi-layer film for a thin film structure and a capacitor using the same2003-05-27Samsung Electronics Co Ltd
235US6568863B2Platform and optical module, method of manufacture thereof, and optical transmission device2003-05-27Seiko Epson Corp
236US6566204B1Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors2003-05-20National Semiconductor Corp
237US6534395B2Method of forming graded thin films using alternating pulses of vapor phase reactants2003-03-18ASM Microchemistry Oy
238US6498107B1Interface control for film deposition by gas-cluster ion-beam processing2002-12-24TEL Epion Inc
239US6436251B2Vault-shaped target and magnetron having both distributed and localized magnets2002-08-20Applied Materials Inc
240US6429037B1Self aligning method for forming a selective emitter and metallization in a solar cell2002-08-06Unisearch Ltd
241US6424028B1Semiconductor devices configured to tolerate connection misalignment2002-07-23Koninklijke Philips Electronics NV
242US6410463B1Method for forming film with low dielectric constant on semiconductor substrate2002-06-25ASM Japan KK
243US6395334B1Multiple head dispensing method2002-05-28Speedline Technologies Inc
244US6274878B1Wafer out-of-pocket detection method2001-08-14Applied Materials Inc
245US6274496B1Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing2001-08-14Tokyo Electron Ltd
246US6183563B1Apparatus for depositing thin films on semiconductor wafers2001-02-06IPS Ltd
247US6158445ASemiconductor wafer cleaning method2000-12-12Verteq Inc
248US6135860AFixture for mechanical grinding and inspection of failed or defective semiconductor devices2000-10-24Sony Corp
249US6123775AReaction chamber component having improved temperature uniformity2000-09-26Lam Research Corp
250US6113695ACoating unit2000-09-05Tokyo Electron Ltd
251US6043132AMethod for forming HSG silicon film of semiconductor device2000-03-28Samsung Electronics Co Ltd
252US5981399AMethod and apparatus for fabricating semiconductor devices1999-11-09Hitachi Ltd
253US5981361AFabrication process of a semiconductor device including a dicing process of a semiconductor wafer1999-11-09Fujitsu Ltd
254US5858819AFabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device1999-01-12Seiko Epson Corp
255US5723028AElectrodeposition apparatus with virtual anode1998-03-03
256US5695817AMethod of forming a coating film1997-12-09Tokyo Electron Ltd
257US5665167APlasma treatment apparatus having a workpiece-side electrode grounding circuit1997-09-09Tokyo Electron Ltd
258US5584938AElectrostatic particle removal and characterization1996-12-17Texas Instruments Inc
259US5476810AManufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support1995-12-19US Philips Corp
260US5295296AMethod and apparatus for working a clad material1994-03-22Citizen Watch Co Ltd
261US4877757AMethod of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma1989-10-31Texas Instruments Inc
262US4425076AProcess and apparatus for automatic positioning of a substrate on a worktable1984-01-10CII Honeywell Bull
263US3851899AMeans for sealing fittings and nozzle assemblies at extremely high fluid pressures1974-12-03
264US3670218AMonolithic heteroepitaxial microwave tunnel die1972-06-13North American Rockwell Corp

264 records in this listing. Patents full text (MLC-0201). Request the full dataset.