Patents full text · MLC-0201
CPC subclass H10P
Generic processes or apparatus for the manufacture or treatment of devices covered by class H10
| No. | Publication | Title | Published | Assignee |
|---|---|---|---|---|
| 101 | US6938505B2 | Chamber wafer detection | 2005-09-06 | TAIWAN SEMICONDUCTOR MFG |
| 102 | US2004241981A1 | Structure and method to fabricate ultra-thin si channel devices | 2004-12-02 | IBM |
| 103 | US6780773B2 | Method of chemical mechanical polishing with high throughput and low dishing | 2004-08-24 | APPLIED MATERIALS INC |
| 104 | US6683663B1 | Web fabrication of devices | 2004-01-27 | ALIEN TECHNOLOGY CORP |
| 105 | US6664129B2 | Integrated circuits and methods for their fabrication | 2003-12-16 | TRI SI TECHNOLOGIES INC |
| 106 | US6660700B2 | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures | 2003-12-09 | ADVANCED TECHNOLOGIES MATERIAL |
| 107 | US6656017B2 | Method and apparatus for creating an open cell micro-environment for treating a substrate with an impingement spray | 2003-12-02 | |
| 108 | US6654668B1 | Processing apparatus, processing system, distinguishing method, and detecting method | 2003-11-25 | TOKYO ELECTRON LTD |
| 109 | US6592671B2 | Apparatus for clamping a planar substrate | 2003-07-15 | DELSYS PHARMACEUTICAL CORP |
| 110 | US6576138B2 | Method for purifying semiconductor gases | 2003-06-10 | PRAXAIR TECHNOLOGY INC |
| 111 | US6570253B1 | Multi-layer film for a thin film structure and a capacitor using the same | 2003-05-27 | SAMSUNG ELECTRONICS CO LTD |
| 112 | US6568863B2 | Platform and optical module, method of manufacture thereof, and optical transmission device | 2003-05-27 | SEIKO EPSON CORP |
| 113 | US6566204B1 | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors | 2003-05-20 | NAT SEMICONDUCTOR CORP |
| 114 | US6534395B2 | Method of forming graded thin films using alternating pulses of vapor phase reactants | 2003-03-18 | ASM MICROCHEMISTRY OY |
| 115 | US6498107B1 | Interface control for film deposition by gas-cluster ion-beam processing | 2002-12-24 | EPION CORP |
| 116 | US6436251B2 | Vault-shaped target and magnetron having both distributed and localized magnets | 2002-08-20 | APPLIED MATERIALS INC |
| 117 | US6429037B1 | Self aligning method for forming a selective emitter and metallization in a solar cell | 2002-08-06 | UNISEARCH LTD |
| 118 | US6424028B1 | Semiconductor devices configured to tolerate connection misalignment | 2002-07-23 | KONINKL PHILIPS ELECTRONICS NV |
| 119 | US6410463B1 | Method for forming film with low dielectric constant on semiconductor substrate | 2002-06-25 | ASM JAPAN |
| 120 | US6395334B1 | Multiple head dispensing method | 2002-05-28 | SPEEDLINE TECHNOLOGIES INC |
| 121 | US6274878B1 | Wafer out-of-pocket detection method | 2001-08-14 | APPLIED MATERIALS INC |
| 122 | US6274496B1 | Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing | 2001-08-14 | TOKYO ELECTRON LTD |
| 123 | US6183563B1 | Apparatus for depositing thin films on semiconductor wafers | 2001-02-06 | IPS LTD |
| 124 | US6158445A | Semiconductor wafer cleaning method | 2000-12-12 | |
| 125 | US6135860A | Fixture for mechanical grinding and inspection of failed or defective semiconductor devices | 2000-10-24 | SONY CORP |
| 126 | US6123775A | Reaction chamber component having improved temperature uniformity | 2000-09-26 | LAM RES CORP |
| 127 | US6113695A | Coating unit | 2000-09-05 | TOKYO ELECTRON LTD |
| 128 | US6043132A | Method for forming HSG silicon film of semiconductor device | 2000-03-28 | SAMSUNG ELECTRONICS CO LTD |
| 129 | US5981399A | Method and apparatus for fabricating semiconductor devices | 1999-11-09 | HITACHI LTD |
| 130 | US5981361A | Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer | 1999-11-09 | FUJITSU LTD |
| 131 | US5858819A | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device | 1999-01-12 | SEIKO EPSON CORP |
| 132 | US5723028A | Electrodeposition apparatus with virtual anode | 1998-03-03 | |
| 133 | US5695817A | Method of forming a coating film | 1997-12-09 | TOKYO ELECTRON LTD |
| 134 | US5665167A | Plasma treatment apparatus having a workpiece-side electrode grounding circuit | 1997-09-09 | TOKYO ELECTRON LTD |
| 135 | US5584938A | Electrostatic particle removal and characterization | 1996-12-17 | TEXAS INSTRUMENTS INC |
| 136 | US5476810A | Manufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support | 1995-12-19 | PHILIPS CORP |
| 137 | US5295296A | Method and apparatus for working a clad material | 1994-03-22 | CITIZEN WATCH CO LTD |
| 138 | US4877757A | Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma | 1989-10-31 | TEXAS INSTRUMENTS INC |
| 139 | US4529353A | Wafer handling apparatus and method | 1985-07-16 | AT & T BELL LAB |
| 140 | US4425076A | Process and apparatus for automatic positioning of a substrate on a worktable | 1984-01-10 | CII HONEYWELL BULL |
| 141 | US3851899A | Means for sealing fittings and nozzle assemblies at extremely high fluid pressures | 1974-12-03 | FRANZ N |
| 142 | US3670218A | Monolithic heteroepitaxial microwave tunnel die | 1972-06-13 | NORTH AMERICAN ROCKWELL |
142 records in this listing. Patents full text (MLC-0201). Request the full dataset.