Patents full text · MLC-0201
CPC subclass H10D
Inorganic electric semiconductor devices
| No. | Publication | Title | Published | Assignee |
|---|---|---|---|---|
| 1 | US12266660B2 | Memory device having 2-transistor memory cell and access line plate | 2025-04-01 | Micron Technology Inc |
| 2 | US12230617B2 | Display device using micro-LED, and manufacturing method therefor | 2025-02-18 | LG Electronics Inc |
| 3 | US11978678B2 | Display device | 2024-05-07 | Innolux Corp |
| 4 | US11088182B2 | Method for transferring light emitting elements, display panel, method for making display panel, and substrate | 2021-08-10 | Century Technology Shenzhen Corp Ltd |
| 5 | US10878908B2 | Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same | 2020-12-29 | Samsung Electronics Co Ltd |
| 6 | US10872801B2 | Target substrate with micro semiconductor structures | 2020-12-22 | Ultra Display Technology Corp |
| 7 | US10734497B2 | Methods for forming a semiconductor device structure and related semiconductor device structures | 2020-08-04 | ASM IP Holding BV |
| 8 | US10510871B1 | Semiconductor device and method | 2019-12-17 | Taiwan Semiconductor Manufacturing Co TSMC Ltd |
| 9 | US10483210B2 | Glass articles with non-planar features and alkali-free glass elements | 2019-11-19 | Corning Inc |
| 10 | US10410943B2 | Method for passivating a surface of a semiconductor and related systems | 2019-09-10 | ASM IP Holding BV |
| 11 | US10367080B2 | Method of forming a germanium oxynitride film | 2019-07-30 | ASM IP Holding BV |
| 12 | US10361201B2 | Semiconductor structure and device formed using selective epitaxial process | 2019-07-23 | ASM IP Holding BV |
| 13 | US10332747B1 | Selective titanium nitride deposition using oxides of lanthanum masks | 2019-06-25 | GlobalFoundries Inc |
| 14 | US10304940B1 | Gate cut and fin trim isolation for advanced integrated circuit structure fabrication | 2019-05-28 | Intel Corp |
| 15 | US10290508B1 | Method for forming vertical spacers for spacer-defined patterning | 2019-05-14 | ASM IP Holding BV |
| 16 | US10229985B1 | Vertical field-effect transistor with uniform bottom spacer | 2019-03-12 | International Business Machines Corp |
| 17 | US10217678B2 | Display device and method of manufacturing the display device | 2019-02-26 | Innolux Corp |
| 18 | US10211308B2 | NbMC layers | 2019-02-19 | ASM IP Holding BV |
| 19 | US10211055B2 | Fin patterns with varying spacing without fin cut | 2019-02-19 | International Business Machines Corp |
| 20 | US10204788B1 | Method of forming high dielectric constant dielectric layer by atomic layer deposition | 2019-02-12 | United Microelectronics Corp |
| 21 | US10181483B2 | Laser assisted transfer welding process | 2019-01-15 | X Celeprint Ltd |
| 22 | US9997357B2 | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors | 2018-06-12 | Lam Research Corp |
| 23 | US9935102B1 | Method and structure for improving vertical transistor | 2018-04-03 | International Business Machines Corp |
| 24 | US9911676B2 | System and method for gas-phase passivation of a semiconductor surface | 2018-03-06 | ASM IP Holding BV |
| 25 | US9899405B2 | Semiconductor device and manufacturing method thereof | 2018-02-20 | ASM IP Holding BV |
| 26 | US9865602B2 | Semiconductor devices having bit lines and method of fabricating the same | 2018-01-09 | Samsung Electronics Co Ltd |
| 27 | US9799736B1 | High acceptor level doping in silicon germanium | 2017-10-24 | International Business Machines Corp |
| 28 | US9780225B2 | Semiconductor device and manufacturing method thereof | 2017-10-03 | Semiconductor Energy Laboratory Co Ltd |
| 29 | US9773818B2 | Display device having transparent conductive film and metal film | 2017-09-26 | Semiconductor Energy Laboratory Co Ltd |
| 30 | US9741847B2 | Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device | 2017-08-22 | GlobalFoundries Inc |
| 31 | US9728652B2 | Sensor device and method | 2017-08-08 | Infineon Technologies AG |
| 32 | US9640715B2 | Printable inorganic semiconductor structures | 2017-05-02 | X Celeprint Ltd |
| 33 | US2017117141A1 | Nbmc layers | 2017-04-27 | ASM IP Holding BV |
| 34 | US9583349B2 | Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride | 2017-02-28 | Applied Materials Inc |
| 35 | US9577047B2 | Integration of semiconductor epilayers on non-native substrates | 2017-02-21 | Palo Alto Research Center Inc |
| 36 | US9450086B2 | Semiconductor device | 2016-09-20 | Renesas Electronics Corp |
| 37 | US9419018B2 | Semiconductor device and method for manufacturing the same | 2016-08-16 | Semiconductor Energy Laboratory Co Ltd |
| 38 | US9406698B2 | Display device and manufacturing method thereof | 2016-08-02 | Semiconductor Energy Laboratory Co Ltd |
| 39 | US9384987B2 | Metal oxide protective layer for a semiconductor device | 2016-07-05 | ASM IP Holding BV |
| 40 | US2016163711A1 | Wet bottling process for small diameter deep trench capacitors | 2016-06-09 | International Business Machines Corp |
| 41 | US9349859B1 | Top metal pads as local interconnectors of vertical transistors | 2016-05-24 | Taiwan Semiconductor Manufacturing Co TSMC Ltd |
| 42 | US9343448B2 | Active matrix emissive micro LED display | 2016-05-17 | LuxVue Technology Corp |
| 43 | US9337057B2 | Semiconductor device and method for fabricating the same | 2016-05-10 | Samsung Electronics Co Ltd |
| 44 | US9331200B1 | Semiconductor device and method for fabricating the same | 2016-05-03 | United Microelectronics Corp |
| 45 | US9324846B1 | Field plate in heterojunction bipolar transistor with improved break-down voltage | 2016-04-26 | GlobalFoundries Inc |
| 46 | US9324811B2 | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same | 2016-04-26 | ASM IP Holding BV |
| 47 | US9281277B2 | Methods of forming wiring structures | 2016-03-08 | Samsung Electronics Co Ltd |
| 48 | US9252238B1 | Semiconductor structures with coplanar recessed gate layers and fabrication methods | 2016-02-02 | GlobalFoundries Inc |
| 49 | US9166012B2 | Semiconductor memory devices including an air gap and methods of fabricating the same | 2015-10-20 | Samsung Electronics Co Ltd |
| 50 | US9161448B2 | Laser assisted transfer welding process | 2015-10-13 | Semprius Inc |
| 51 | US2015287942A1 | Forming pn junction contacts by different dielectrics | 2015-10-08 | International Business Machines Corp |
| 52 | US9129897B2 | Metal silicide, metal germanide, methods for making the same | 2015-09-08 | ASM International NV |
| 53 | US9117940B2 | Optical systems fabricated by printing-based assembly | 2015-08-25 | Semprius Inc |
| 54 | US9099423B2 | Doped semiconductor films and processing | 2015-08-04 | ASM IP Holding BV |
| 55 | US2015179640A1 | Common fabrication of different semiconductor devices with different threshold voltages | 2015-06-25 | GlobalFoundries Inc |
| 56 | US9029253B2 | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same | 2015-05-12 | ASM IP Holding BV |
| 57 | US8987765B2 | Reflective bank structure and method for integrating a light emitting device | 2015-03-24 | LuxVue Technology Corp |
| 58 | US8946830B2 | Metal oxide protective layer for a semiconductor device | 2015-02-03 | ASM IP Holding BV |
| 59 | US8779502B2 | Nonvolatile semiconductor memory | 2014-07-15 | Toshiba Corp |
| 60 | US8710580B2 | Semiconductor device and method of manufacturing the same | 2014-04-29 | Toshiba Corp |
| 61 | US8367528B2 | Cyclical epitaxial deposition and etch | 2013-02-05 | ASM America Inc |
| 62 | US2012032311A1 | Multi component dielectric layer | 2012-02-09 | International Business Machines Corp |
| 63 | US8076230B2 | Method of forming self-aligned contacts and local interconnects | 2011-12-13 | Macronix International Co Ltd |
| 64 | US8071452B2 | Atomic layer deposition of hafnium lanthanum oxides | 2011-12-06 | ASM America Inc |
| 65 | US2011263115A1 | Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors | 2011-10-27 | Applied Materials Inc |
| 66 | US8039895B2 | Transistors having a channel region between channel-portion holes and methods of forming the same | 2011-10-18 | Samsung Electronics Co Ltd |
| 67 | US7982296B2 | Methods and devices for fabricating and assembling printable semiconductor elements | 2011-07-19 | University of Illinois System |
| 68 | US7932123B2 | Release strategies for making transferable semiconductor structures, devices and device components | 2011-04-26 | University of Illinois System |
| 69 | US7795160B2 | ALD of metal silicate films | 2010-09-14 | ASM America Inc |
| 70 | US2010213594A1 | Semiconductor device and a manufacturing method of the same | 2010-08-26 | Renesas Technology Corp |
| 71 | US7575968B2 | Inverse slope isolation and dual surface orientation integration | 2009-08-18 | Freescale Semiconductor Inc |
| 72 | US2009111244A1 | Method for manufacturing semiconductor device | 2009-04-30 | Semiconductor Energy Laboratory Co Ltd |
| 73 | US2009095956A1 | Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device | 2009-04-16 | |
| 74 | US7511382B2 | Semiconductor chip arrangement and method | 2009-03-31 | Infineon Technologies AG |
| 75 | US2007173007A1 | Semiconductor device and method for fabricating the same | 2007-07-26 | Hynix Semiconductor Inc |
| 76 | US2007029577A1 | Field effect transistor and method of manufacturing the same | 2007-02-08 | Toshiba Corp |
| 77 | US2006151203A1 | Encapsulated electronic component and production method | 2006-07-13 | Epcos AG |
| 78 | US2005170554A1 | Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material | 2005-08-04 | |
| 79 | US2004241981A1 | Structure and method to fabricate ultra-thin si channel devices | 2004-12-02 | International Business Machines Corp |
| 80 | US6825559B2 | Group III nitride based flip-chip intergrated circuit and method for fabricating | 2004-11-30 | Cree Inc |
| 81 | US6788507B2 | Electrostatic discharge protection circuit | 2004-09-07 | United Microelectronics Corp |
| 82 | US6740901B2 | Production of semiconductor integrated circuit | 2004-05-25 | Renesas Technology Corp |
| 83 | US6683663B1 | Web fabrication of devices | 2004-01-27 | Alien Technology LLC |
| 84 | US6664129B2 | Integrated circuits and methods for their fabrication | 2003-12-16 | Allvia Inc |
| 85 | US6570253B1 | Multi-layer film for a thin film structure and a capacitor using the same | 2003-05-27 | Samsung Electronics Co Ltd |
| 86 | US6566204B1 | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors | 2003-05-20 | National Semiconductor Corp |
| 87 | US6534395B2 | Method of forming graded thin films using alternating pulses of vapor phase reactants | 2003-03-18 | ASM Microchemistry Oy |
| 88 | US6498107B1 | Interface control for film deposition by gas-cluster ion-beam processing | 2002-12-24 | TEL Epion Inc |
| 89 | US6452226B2 | Non-volatile semiconductor memory device and manufacturing method thereof | 2002-09-17 | Mitsubishi Electric Corp |
| 90 | US6424028B1 | Semiconductor devices configured to tolerate connection misalignment | 2002-07-23 | Koninklijke Philips Electronics NV |
| 91 | US6287964B1 | Method for forming a metallization layer of a semiconductor device | 2001-09-11 | Hyundai Electronics Industries Co Ltd |
| 92 | US6284616B1 | Circuit and method for reducing parasitic bipolar effects during electrostatic discharges | 2001-09-04 | Motorola Inc |
| 93 | US6262706B1 | Retroreflective electrophoretic displays and materials for making the same | 2001-07-17 | E Ink Corp |
| 94 | US6180977B1 | Self-aligned edge implanted cell to reduce leakage current and improve program speed in split-gate flash | 2001-01-30 | Taiwan Semiconductor Manufacturing Co TSMC Ltd |
| 95 | US6177921B1 | Printable electrode structures for displays | 2001-01-23 | E Ink Corp |
| 96 | US6023074A | Active matrix display having storage capacitor associated with each pixel transistor | 2000-02-08 | Semiconductor Energy Laboratory Co Ltd |
| 97 | US5858819A | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device | 1999-01-12 | Seiko Epson Corp |
| 98 | US5759867A | Method of making a disposable corner etch stop-spacer for borderless contacts | 1998-06-02 | International Business Machines Corp |
| 99 | US5476810A | Manufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support | 1995-12-19 | US Philips Corp |
| 100 | US5446298A | Semiconductor memory device including a floating gate having an undoped edge portion proximate to a source portion of the memory device | 1995-08-29 | Rohm Co Ltd |
104 records in this listing. Patents full text (MLC-0201). Request the full dataset.